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In3Ga4

Alexandria ALEX

Alex-ID: agm008299459 · 空间群: Immm (#71)

基础信息

化学式
In3Ga4
Alex-ID
agm008299459
元素数
2
位点数
14
空间群
Immm (#71)
晶系
orthorhombic
体积
323.13
ų
晶胞参数 a
9.2719
Å
晶胞参数 b
9.2719
Å
晶胞参数 c
9.2719
Å
α 角
154.20
°
β 角
109.29
°
γ 角
76.66
°

组成

元素组成(原子分数)
组成信息
化学式
In3Ga4
In
6.00 · 42.9%
Ga
8.00 · 57.1%

能量与稳定性

凸包上方能量
0.0451
eV/atom
形成能
0.0451
eV/atom
校正后总能量
-40.2213
eV
原始总能量
-40.2213
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0076
eV
费米能级态密度
5.4224
总磁矩
0.0000
μB

其他信息

原型 ID

A3B4_2181_spg71

分解产物

Ga In

计算时间

2024-03-14 23:18:25.316643

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm008299459).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm008299459
data_agm008299459
_cell_length_a     9.27191
_cell_length_b     9.27191
_cell_length_c     9.27191
_cell_angle_alpha  154.19667
_cell_angle_beta   109.29061
_cell_angle_gamma  76.66447
_cell_volume       323.12684
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.50000 0.50000 0.00000 1.00000
  In2 In 0.80586 0.80586 0.00000 1.00000
  In3 In 0.19414 0.19414 0.00000 1.00000
  In4 In 0.00000 0.50000 0.50000 1.00000
  In5 In 0.21766 0.00000 0.21766 1.00000
  In6 In 0.78234 0.00000 0.78234 1.00000
  Ga1 Ga 0.95178 0.66821 0.28357 1.00000
  Ga2 Ga 0.04822 0.33179 0.71643 1.00000
  Ga3 Ga 0.38463 0.66821 0.71643 1.00000
  Ga4 Ga 0.61537 0.33179 0.28357 1.00000
  Ga5 Ga 0.22182 0.84149 0.38033 1.00000
  Ga6 Ga 0.77818 0.15851 0.61967 1.00000
  Ga7 Ga 0.46116 0.84149 0.61967 1.00000
  Ga8 Ga 0.53884 0.15851 0.38033 1.00000
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