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Hf4Zn4Ga7

Alexandria ALEX

Alex-ID: agm008564286 · Space group: I4/mmm (#139)

Basic Information

Formula
Hf4Zn4Ga7
Alex-ID
agm008564286
Elements
3
Sites
30
Space group
I4/mmm (#139)
Crystal system
tetragonal
Volume
511.30
ų
Cell a
10.0975
Å
Cell b
10.0975
Å
Cell c
10.0975
Å
α angle
94.10
°
β angle
94.10
°
γ angle
148.98
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Hf4Zn4Ga7
Hf
8.00 · 26.7%
Zn
8.00 · 26.7%
Ga
14.00 · 46.7%

Energy & Stability

Energy above hull
0.1078
eV/atom
Formation energy
-0.2818
eV/atom
Corrected total energy
-140.7190
eV
Raw total energy
-140.7190
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0061
eV
DOS at Fermi level
9.4242
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A4B4C7_0_spg139

Decomposition

HfZnGa2 HfGa2 Hf2(ZnGa)3

Computed at

2024-06-28 09:37:00.890826

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm008564286).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm008564286
data_agm008564286
_cell_length_a     10.09750
_cell_length_b     10.09750
_cell_length_c     10.09750
_cell_angle_alpha  94.10179
_cell_angle_beta   94.10179
_cell_angle_gamma  148.97503
_cell_volume       511.30443
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Hf1 Hf 0.13336 0.13336 0.26672 1.00000
  Hf2 Hf 0.86664 0.86664 0.73328 1.00000
  Hf3 Hf 0.86664 0.13336 0.00000 1.00000
  Hf4 Hf 0.13336 0.86664 0.00000 1.00000
  Hf5 Hf 0.50000 0.30293 0.80293 1.00000
  Hf6 Hf 0.50000 0.69707 0.19707 1.00000
  Hf7 Hf 0.69707 0.50000 0.19707 1.00000
  Hf8 Hf 0.30293 0.50000 0.80293 1.00000
  Zn1 Zn 0.40505 0.90505 0.81011 1.00000
  Zn2 Zn 0.09495 0.59495 0.18989 1.00000
  Zn3 Zn 0.09495 0.90505 0.50000 1.00000
  Zn4 Zn 0.40505 0.59495 0.50000 1.00000
  Zn5 Zn 0.59495 0.40505 0.50000 1.00000
  Zn6 Zn 0.90505 0.09495 0.50000 1.00000
  Zn7 Zn 0.90505 0.40505 0.81011 1.00000
  Zn8 Zn 0.59495 0.09495 0.18989 1.00000
  Ga1 Ga 0.50000 0.08958 0.58958 1.00000
  Ga2 Ga 0.50000 0.91042 0.41042 1.00000
  Ga3 Ga 0.91042 0.50000 0.41042 1.00000
  Ga4 Ga 0.08958 0.50000 0.58958 1.00000
  Ga5 Ga 0.74735 0.74735 0.00000 1.00000
  Ga6 Ga 0.25265 0.25265 0.00000 1.00000
  Ga7 Ga 0.30288 0.30288 0.60577 1.00000
  Ga8 Ga 0.69712 0.69712 0.39423 1.00000
  Ga9 Ga 0.69712 0.30288 0.00000 1.00000
  Ga10 Ga 0.30288 0.69712 0.00000 1.00000
  Ga11 Ga 0.00000 0.28462 0.28462 1.00000
  Ga12 Ga 0.00000 0.71538 0.71538 1.00000
  Ga13 Ga 0.71538 0.00000 0.71538 1.00000
  Ga14 Ga 0.28462 0.00000 0.28462 1.00000
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