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Rb2In2Si3O10

Alexandria ALEX

Alex-ID: agm009077693 · 空间群: Fdd2 (#43)

基础信息

化学式
Rb2In2Si3O10
Alex-ID
agm009077693
元素数
4
位点数
34
空间群
Fdd2 (#43)
晶系
orthorhombic
体积
617.24
ų
晶胞参数 a
13.4629
Å
晶胞参数 b
10.8277
Å
晶胞参数 c
9.3719
Å
α 角
83.26
°
β 角
53.01
°
γ 角
43.73
°

组成

元素组成(原子分数)
组成信息
化学式
Rb2In2Si3O10
Rb
4.00 · 11.8%
In
4.00 · 11.8%
Si
6.00 · 17.6%
O
20.00 · 58.8%

能量与稳定性

凸包上方能量
0.0277
eV/atom
形成能
-2.6894
eV/atom
校正后总能量
-238.0916
eV
原始总能量
-224.0458
eV

电子结构

间接带隙
3.1695
eV
直接带隙
3.1921
eV
费米能级态密度
0.0000
总磁矩
0.0000
μB

其他信息

原型 ID

A2B2C3D10_10_spg5

分解产物

Rb3In(SiO3)3 Rb4In2Si8O21 In2O3

计算时间

2025-02-28 16:47:33

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm009077693).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm009077693
data_agm009077693
_cell_length_a     13.46293
_cell_length_b     10.82774
_cell_length_c     9.37188
_cell_angle_alpha  83.25938
_cell_angle_beta   53.00648
_cell_angle_gamma  43.73414
_cell_volume       617.24280
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.30200 0.07341 0.63155 1.00000
  Rb2 Rb 0.99304 0.63155 0.07341 1.00000
  Rb3 Rb 0.17659 0.94800 0.25696 1.00000
  Rb4 Rb 0.61845 0.25696 0.94800 1.00000
  In1 In 0.67680 0.50803 0.24855 1.00000
  In2 In 0.56662 0.24855 0.50803 1.00000
  In3 In 0.74197 0.57320 0.68338 1.00000
  In4 In 0.00145 0.68338 0.57320 1.00000
  Si1 Si 0.01872 0.98128 0.98128 1.00000
  Si2 Si 0.26872 0.23128 0.23128 1.00000
  Si3 Si 0.69217 0.74726 0.02400 1.00000
  Si4 Si 0.53658 0.02400 0.74726 1.00000
  Si5 Si 0.50274 0.55783 0.71342 1.00000
  Si6 Si 0.22600 0.71342 0.55783 1.00000
  O1 O 0.96336 0.17224 0.04000 1.00000
  O2 O 0.82439 0.04000 0.17224 1.00000
  O3 O 0.07776 0.28664 0.42561 1.00000
  O4 O 0.21000 0.42561 0.28664 1.00000
  O5 O 0.71014 0.67096 0.17913 1.00000
  O6 O 0.43978 0.17913 0.67096 1.00000
  O7 O 0.57904 0.53986 0.81022 1.00000
  O8 O 0.07087 0.81022 0.53986 1.00000
  O9 O 0.43626 0.61745 0.32767 1.00000
  O10 O 0.61862 0.32767 0.61745 1.00000
  O11 O 0.63255 0.81374 0.63138 1.00000
  O12 O 0.92233 0.63138 0.81374 1.00000
  O13 O 0.63900 0.68041 0.96580 1.00000
  O14 O 0.71479 0.96580 0.68041 1.00000
  O15 O 0.56959 0.61100 0.53521 1.00000
  O16 O 0.28420 0.53521 0.61100 1.00000
  O17 O 0.48603 0.01817 0.17009 1.00000
  O18 O 0.32571 0.17009 0.01817 1.00000
  O19 O 0.23183 0.76397 0.92429 1.00000
  O20 O 0.07991 0.92429 0.76397 1.00000
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