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Rb2Si2Hg3Se8

Alexandria ALEX

Alex-ID: agm009253045 · Space group: P2_1/c (#14)

Basic Information

Formula
Rb2Si2Hg3Se8
Alex-ID
agm009253045
Elements
4
Sites
30
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
990.22
ų
Cell a
10.4305
Å
Cell b
6.8112
Å
Cell c
13.9904
Å
α angle
90.00
°
β angle
85.04
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Rb2Si2Hg3Se8
Rb
4.00 · 13.3%
Si
4.00 · 13.3%
Hg
6.00 · 20.0%
Se
16.00 · 53.3%

Energy & Stability

Energy above hull
0.0048
eV/atom
Formation energy
-0.5730
eV/atom
Corrected total energy
-100.7678
eV
Raw total energy
-100.7678
eV

Electronic Structure

Indirect band gap
1.3996
eV
Direct band gap
1.5828
eV
DOS at Fermi level
-0.0011
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A2B2C3D8_20_spg14

Decomposition

Rb2Si2Se5 HgSe

Computed at

2025-03-13 01:06:52

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm009253045).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm009253045
data_agm009253045
_cell_length_a     10.43048
_cell_length_b     6.81124
_cell_length_c     13.99040
_cell_angle_alpha  90.00000
_cell_angle_beta   85.04190
_cell_angle_gamma  90.00000
_cell_volume       990.22282
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.76564 0.64727 0.82605 1.00000
  Rb2 Rb 0.23436 0.35273 0.17395 1.00000
  Rb3 Rb 0.23436 0.14727 0.67395 1.00000
  Rb4 Rb 0.76564 0.85273 0.32605 1.00000
  Si1 Si 0.28161 0.70531 0.91484 1.00000
  Si2 Si 0.71839 0.29469 0.08516 1.00000
  Si3 Si 0.71839 0.20531 0.58516 1.00000
  Si4 Si 0.28161 0.79469 0.41484 1.00000
  Hg1 Hg 0.51199 0.71373 0.60905 1.00000
  Hg2 Hg 0.48801 0.28627 0.39095 1.00000
  Hg3 Hg 0.48801 0.21373 0.89095 1.00000
  Hg4 Hg 0.51199 0.78627 0.10905 1.00000
  Hg5 Hg 0.00000 0.00000 0.00000 1.00000
  Hg6 Hg 0.00000 0.50000 0.50000 1.00000
  Se1 Se 0.26045 0.36821 0.90785 1.00000
  Se2 Se 0.73955 0.63179 0.09215 1.00000
  Se3 Se 0.73955 0.86821 0.59215 1.00000
  Se4 Se 0.26045 0.13179 0.40785 1.00000
  Se5 Se 0.45203 0.82591 0.82283 1.00000
  Se6 Se 0.54797 0.17409 0.17717 1.00000
  Se7 Se 0.54797 0.32591 0.67717 1.00000
  Se8 Se 0.45203 0.67409 0.32283 1.00000
  Se9 Se 0.08792 0.80677 0.85641 1.00000
  Se10 Se 0.91208 0.19323 0.14359 1.00000
  Se11 Se 0.91208 0.30677 0.64359 1.00000
  Se12 Se 0.08792 0.69323 0.35641 1.00000
  Se13 Se 0.27259 0.68117 0.57040 1.00000
  Se14 Se 0.72741 0.31883 0.42960 1.00000
  Se15 Se 0.72741 0.18117 0.92960 1.00000
  Se16 Se 0.27259 0.81883 0.07040 1.00000
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