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Y8Ga21Rh11

Alexandria ALEX

Alex-ID: agm009693294 · 空间群: C222 (#21)

基础信息

化学式
Y8Ga21Rh11
Alex-ID
agm009693294
元素数
3
位点数
40
空间群
C222 (#21)
晶系
orthorhombic
体积
715.83
ų
晶胞参数 a
11.2570
Å
晶胞参数 b
11.2570
Å
晶胞参数 c
5.6489
Å
α 角
90.00
°
β 角
90.00
°
γ 角
89.85
°

组成

元素组成(原子分数)
组成信息
化学式
Y8Ga21Rh11
Y
8.00 · 20.0%
Ga
21.00 · 52.5%
Rh
11.00 · 27.5%

能量与稳定性

凸包上方能量
0.0153
eV/atom
形成能
-0.7777
eV/atom
校正后总能量
-227.2940
eV
原始总能量
-227.2940
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0270
eV
费米能级态密度
18.6984
总磁矩
0.0000
μB

其他信息

原型 ID

A8B11C21_0_spg21

分解产物

Y2Ga5Rh3 YGa2 Y2(Ga3Rh)3

计算时间

2024-05-29 04:21:33.920686

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm009693294).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm009693294
data_agm009693294
_cell_length_a     11.25704
_cell_length_b     11.25704
_cell_length_c     5.64888
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  89.84533
_cell_volume       715.82860
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.23596 0.42535 0.24286 1.00000
  Y2 Y 0.76404 0.57465 0.24286 1.00000
  Y3 Y 0.73711 0.07139 0.74682 1.00000
  Y4 Y 0.26289 0.92861 0.74682 1.00000
  Y5 Y 0.92861 0.26289 0.25318 1.00000
  Y6 Y 0.07139 0.73711 0.25318 1.00000
  Y7 Y 0.57465 0.76404 0.75714 1.00000
  Y8 Y 0.42535 0.23596 0.75714 1.00000
  Ga1 Ga 0.50000 0.00000 0.99030 1.00000
  Ga2 Ga 0.00000 0.50000 0.49064 1.00000
  Ga3 Ga 0.50000 0.00000 0.50936 1.00000
  Ga4 Ga 0.00000 0.50000 0.00970 1.00000
  Ga5 Ga 0.31411 0.68589 0.00000 1.00000
  Ga6 Ga 0.68589 0.31411 0.00000 1.00000
  Ga7 Ga 0.82451 0.82451 0.50000 1.00000
  Ga8 Ga 0.17549 0.17549 0.50000 1.00000
  Ga9 Ga 0.17340 0.17340 0.00000 1.00000
  Ga10 Ga 0.82660 0.82660 0.00000 1.00000
  Ga11 Ga 0.32130 0.67870 0.50000 1.00000
  Ga12 Ga 0.67870 0.32130 0.50000 1.00000
  Ga13 Ga 0.47452 0.31116 0.26481 1.00000
  Ga14 Ga 0.52548 0.68884 0.26481 1.00000
  Ga15 Ga 0.97125 0.18236 0.75111 1.00000
  Ga16 Ga 0.02875 0.81764 0.75111 1.00000
  Ga17 Ga 0.81764 0.02875 0.24889 1.00000
  Ga18 Ga 0.18236 0.97125 0.24889 1.00000
  Ga19 Ga 0.68884 0.52548 0.73519 1.00000
  Ga20 Ga 0.31116 0.47452 0.73519 1.00000
  Ga21 Ga 0.50000 0.50000 0.00000 1.00000
  Rh1 Rh 0.35717 0.12314 0.24806 1.00000
  Rh2 Rh 0.64283 0.87686 0.24806 1.00000
  Rh3 Rh 0.86024 0.37775 0.75173 1.00000
  Rh4 Rh 0.13976 0.62225 0.75173 1.00000
  Rh5 Rh 0.62225 0.13976 0.24827 1.00000
  Rh6 Rh 0.37775 0.86024 0.24827 1.00000
  Rh7 Rh 0.87686 0.64283 0.75194 1.00000
  Rh8 Rh 0.12314 0.35717 0.75194 1.00000
  Rh9 Rh 0.00000 0.00000 0.50000 1.00000
  Rh10 Rh 0.00000 0.00000 0.00000 1.00000
  Rh11 Rh 0.50000 0.50000 0.50000 1.00000
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