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La3In4Ga7

Alexandria ALEX

Alex-ID: agm009750167 · 空间群: C2/m (#12)

Alexandria Database API

基础信息

化学式
La3In4Ga7
Alex-ID
agm009750167
元素数
3
位点数
14
空间群
C2/m (#12)
晶系
monoclinic
体积
327.81
ų
晶胞参数 a
8.7619
Å
晶胞参数 b
8.7619
Å
晶胞参数 c
10.6407
Å
α 角
54.56
°
β 角
54.56
°
γ 角
30.12
°

组成

元素组成（原子分数）
组成信息
化学式
La3In4Ga7
La
3.00 · 21.4%
In
4.00 · 28.6%
Ga
7.00 · 50.0%

能量与稳定性

凸包上方能量
0.0602
eV/atom
形成能
-0.4268
eV/atom
校正后总能量
-53.0416
eV
原始总能量
-53.0416
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0571
eV
费米能级态密度
5.2991
总磁矩
0.0000
μB

其他信息

原型 ID

A3B4C7_31_spg12

分解产物

LaIn3 La3Ga8 In

计算时间

2024-03-25 21:28:52.152197

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm009750167).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm009750167
data_agm009750167
_cell_length_a     8.76190
_cell_length_b     8.76190
_cell_length_c     10.64066
_cell_angle_alpha  54.56248
_cell_angle_beta   54.56248
_cell_angle_gamma  30.12074
_cell_volume       327.81421
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  La1 La 0.32854 0.32854 0.67676 1.00000
  La2 La 0.67146 0.67146 0.32324 1.00000
  La3 La 0.00000 0.00000 0.00000 1.00000
  In1 In 0.67757 0.67757 0.96719 1.00000
  In2 In 0.32243 0.32243 0.03281 1.00000
  In3 In 0.84266 0.84266 0.42666 1.00000
  In4 In 0.15734 0.15734 0.57334 1.00000
  Ga1 Ga 0.34807 0.34807 0.26451 1.00000
  Ga2 Ga 0.50596 0.50596 0.70946 1.00000
  Ga3 Ga 0.88181 0.88181 0.83895 1.00000
  Ga4 Ga 0.65193 0.65193 0.73549 1.00000
  Ga5 Ga 0.11819 0.11819 0.16105 1.00000
  Ga6 Ga 0.00000 0.00000 0.50000 1.00000
  Ga7 Ga 0.49404 0.49404 0.29054 1.00000
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