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Ac2Ga2Ni3

Alexandria ALEX

Alex-ID: agm009786196 · 空间群: C2/m (#12)

基础信息

化学式
Ac2Ga2Ni3
Alex-ID
agm009786196
元素数
3
位点数
7
空间群
C2/m (#12)
晶系
monoclinic
体积
151.47
ų
晶胞参数 a
6.0501
Å
晶胞参数 b
6.0501
Å
晶胞参数 c
6.7993
Å
α 角
75.12
°
β 角
104.88
°
γ 角
140.76
°

组成

元素组成(原子分数)
组成信息
化学式
Ac2Ga2Ni3
Ac
2.00 · 28.6%
Ga
2.00 · 28.6%
Ni
3.00 · 42.9%

能量与稳定性

凸包上方能量
0.0951
eV/atom
形成能
-0.4049
eV/atom
校正后总能量
-34.4611
eV
原始总能量
-34.4611
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0258
eV
费米能级态密度
6.8803
总磁矩
0.0000
μB

其他信息

原型 ID

A2B2C3_21_spg12

分解产物

AcGaNi AcGaNi2

计算时间

2025-05-25 21:40:59

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm009786196).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm009786196
data_agm009786196
_cell_length_a     6.05011
_cell_length_b     6.05011
_cell_length_c     6.79932
_cell_angle_alpha  75.11663
_cell_angle_beta   104.88337
_cell_angle_gamma  140.76023
_cell_volume       151.46815
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ac1 Ac 0.16607 0.83393 0.71209 1.00000
  Ac2 Ac 0.83393 0.16607 0.28791 1.00000
  Ga1 Ga 0.09651 0.90349 0.17947 1.00000
  Ga2 Ga 0.90349 0.09651 0.82053 1.00000
  Ni1 Ni 0.50000 0.50000 0.00000 1.00000
  Ni2 Ni 0.44850 0.55150 0.63037 1.00000
  Ni3 Ni 0.55150 0.44850 0.36963 1.00000
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