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Ce2YSi2S8Br

Alexandria ALEX

Alex-ID: agm010218775 · Space group: C2/c (#15)

Basic Information

Formula
Ce2YSi2S8Br
Alex-ID
agm010218775
Elements
5
Sites
28
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
667.66
ų
Cell a
8.6279
Å
Cell b
8.6279
Å
Cell c
11.2198
Å
α angle
86.56
°
β angle
93.44
°
γ angle
126.76
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ce2YSi2S8Br
Ce
4.00 · 14.3%
Y
2.00 · 7.1%
Si
4.00 · 14.3%
S
16.00 · 57.1%
Br
2.00 · 7.1%

Energy & Stability

Energy above hull
0.0148
eV/atom
Formation energy
-1.8126
eV/atom
Corrected total energy
-178.4909
eV
Raw total energy
-167.8755
eV

Electronic Structure

Indirect band gap
0.0076
eV
Direct band gap
0.0076
eV
DOS at Fermi level
31.1197
Total magnetisation
4.0003
μB

Additional Information

Prototype ID

ABC2D2E8_41_spg15

Decomposition

Ce3S5 SiS2 YSBr Si

Computed at

2025-01-16 05:36:18

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010218775).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010218775
data_agm010218775
_cell_length_a     8.62791
_cell_length_b     8.62791
_cell_length_c     11.21980
_cell_angle_alpha  86.56465
_cell_angle_beta   93.43535
_cell_angle_gamma  126.75552
_cell_volume       667.66301
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.68050 0.06943 0.80728 1.00000
  Ce2 Ce 0.06943 0.68050 0.69272 1.00000
  Ce3 Ce 0.31950 0.93057 0.19272 1.00000
  Ce4 Ce 0.93057 0.31950 0.30728 1.00000
  Y1 Y 0.40699 0.40699 0.75000 1.00000
  Y2 Y 0.59301 0.59301 0.25000 1.00000
  Si1 Si 0.36859 0.69226 0.46163 1.00000
  Si2 Si 0.69226 0.36859 0.03837 1.00000
  Si3 Si 0.63141 0.30774 0.53837 1.00000
  Si4 Si 0.30774 0.63141 0.96163 1.00000
  S1 S 0.60131 0.89151 0.34956 1.00000
  S2 S 0.89151 0.60131 0.15044 1.00000
  S3 S 0.39869 0.10849 0.65044 1.00000
  S4 S 0.10849 0.39869 0.84956 1.00000
  S5 S 0.28659 0.41402 0.42421 1.00000
  S6 S 0.41402 0.28659 0.07579 1.00000
  S7 S 0.71341 0.58598 0.57579 1.00000
  S8 S 0.58598 0.71341 0.92421 1.00000
  S9 S 0.43292 0.72897 0.64916 1.00000
  S10 S 0.72897 0.43292 0.85084 1.00000
  S11 S 0.56708 0.27103 0.35084 1.00000
  S12 S 0.27103 0.56708 0.14916 1.00000
  S13 S 0.13820 0.71387 0.41788 1.00000
  S14 S 0.71387 0.13820 0.08212 1.00000
  S15 S 0.86180 0.28613 0.58212 1.00000
  S16 S 0.28613 0.86180 0.91788 1.00000
  Br1 Br 0.99527 0.99527 0.25000 1.00000
  Br2 Br 0.00473 0.00473 0.75000 1.00000
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