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TbCe2Si2S8Br

Alexandria ALEX

Alex-ID: agm010230719 · Space group: C2/c (#15)

Basic Information

Formula
TbCe2Si2S8Br
Alex-ID
agm010230719
Elements
5
Sites
28
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
667.70
ų
Cell a
8.6393
Å
Cell b
8.6393
Å
Cell c
11.2046
Å
α angle
86.42
°
β angle
93.58
°
γ angle
126.83
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
TbCe2Si2S8Br
Tb
2.00 · 7.1%
Ce
4.00 · 14.3%
Si
4.00 · 14.3%
S
16.00 · 57.1%
Br
2.00 · 7.1%

Energy & Stability

Energy above hull
0.0112
eV/atom
Formation energy
-1.8154
eV/atom
Corrected total energy
-174.9076
eV
Raw total energy
-164.2922
eV

Electronic Structure

Indirect band gap
0.0067
eV
Direct band gap
0.0068
eV
DOS at Fermi level
31.0487
Total magnetisation
4.0003
μB

Additional Information

Prototype ID

ABC2D2E8_41_spg15

Decomposition

TbSBr Ce3S5 SiS2 Si

Computed at

2024-12-06 06:28:58

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010230719).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010230719
data_agm010230719
_cell_length_a     8.63925
_cell_length_b     8.63925
_cell_length_c     11.20464
_cell_angle_alpha  86.41532
_cell_angle_beta   93.58468
_cell_angle_gamma  126.83335
_cell_volume       667.70420
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.40621 0.40621 0.75000 1.00000
  Tb2 Tb 0.59379 0.59379 0.25000 1.00000
  Ce1 Ce 0.68067 0.06991 0.80762 1.00000
  Ce2 Ce 0.06991 0.68067 0.69238 1.00000
  Ce3 Ce 0.31933 0.93009 0.19238 1.00000
  Ce4 Ce 0.93009 0.31933 0.30762 1.00000
  Si1 Si 0.36877 0.69220 0.46201 1.00000
  Si2 Si 0.69220 0.36877 0.03799 1.00000
  Si3 Si 0.63123 0.30780 0.53799 1.00000
  Si4 Si 0.30780 0.63123 0.96201 1.00000
  S1 S 0.60110 0.89191 0.34980 1.00000
  S2 S 0.89191 0.60110 0.15020 1.00000
  S3 S 0.39890 0.10809 0.65020 1.00000
  S4 S 0.10809 0.39890 0.84980 1.00000
  S5 S 0.28621 0.41379 0.42536 1.00000
  S6 S 0.41379 0.28621 0.07464 1.00000
  S7 S 0.71379 0.58621 0.57464 1.00000
  S8 S 0.58621 0.71379 0.92536 1.00000
  S9 S 0.43395 0.72970 0.64968 1.00000
  S10 S 0.72970 0.43395 0.85032 1.00000
  S11 S 0.56605 0.27030 0.35032 1.00000
  S12 S 0.27030 0.56605 0.14968 1.00000
  S13 S 0.13834 0.71352 0.41784 1.00000
  S14 S 0.71352 0.13834 0.08216 1.00000
  S15 S 0.86166 0.28648 0.58216 1.00000
  S16 S 0.28648 0.86166 0.91784 1.00000
  Br1 Br 0.99433 0.99433 0.25000 1.00000
  Br2 Br 0.00567 0.00567 0.75000 1.00000
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