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La2TmSi2S8Cl

Alexandria ALEX

Alex-ID: agm010613641 · Space group: C2/c (#15)

Basic Information

Formula
La2TmSi2S8Cl
Alex-ID
agm010613641
Elements
5
Sites
28
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
675.11
ų
Cell a
8.4880
Å
Cell b
8.4880
Å
Cell c
11.1138
Å
α angle
88.03
°
β angle
91.97
°
γ angle
122.46
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
La2TmSi2S8Cl
La
4.00 · 14.3%
Tm
2.00 · 7.1%
Si
4.00 · 14.3%
S
16.00 · 57.1%
Cl
2.00 · 7.1%

Energy & Stability

Energy above hull
0.0171
eV/atom
Formation energy
-1.9838
eV/atom
Corrected total energy
-174.4390
eV
Raw total energy
-163.8237
eV

Electronic Structure

Indirect band gap
2.4441
eV
Direct band gap
2.4441
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2D2E8_41_spg15

Decomposition

TmSCl La4(SiS4)3 SiS2

Computed at

2025-01-03 13:30:09

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010613641).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010613641
data_agm010613641
_cell_length_a     8.48804
_cell_length_b     8.48804
_cell_length_c     11.11378
_cell_angle_alpha  88.02505
_cell_angle_beta   91.97495
_cell_angle_gamma  122.45826
_cell_volume       675.10537
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  La1 La 0.69518 0.07266 0.31154 1.00000
  La2 La 0.07266 0.69518 0.18846 1.00000
  La3 La 0.30482 0.92734 0.68846 1.00000
  La4 La 0.92734 0.30482 0.81154 1.00000
  Tm1 Tm 0.49199 0.49199 0.25000 1.00000
  Tm2 Tm 0.50801 0.50801 0.75000 1.00000
  Si1 Si 0.38110 0.69954 0.95610 1.00000
  Si2 Si 0.69954 0.38110 0.54390 1.00000
  Si3 Si 0.61890 0.30046 0.04390 1.00000
  Si4 Si 0.30046 0.61890 0.45610 1.00000
  S1 S 0.59751 0.85379 0.83014 1.00000
  S2 S 0.85379 0.59751 0.66986 1.00000
  S3 S 0.40249 0.14621 0.16986 1.00000
  S4 S 0.14621 0.40249 0.33014 1.00000
  S5 S 0.28184 0.41214 0.94026 1.00000
  S6 S 0.41214 0.28184 0.55974 1.00000
  S7 S 0.71816 0.58786 0.05974 1.00000
  S8 S 0.58786 0.71816 0.44026 1.00000
  S9 S 0.45374 0.76715 0.14231 1.00000
  S10 S 0.76715 0.45374 0.35769 1.00000
  S11 S 0.54626 0.23285 0.85769 1.00000
  S12 S 0.23285 0.54626 0.64231 1.00000
  S13 S 0.14522 0.72130 0.91863 1.00000
  S14 S 0.72130 0.14522 0.58137 1.00000
  S15 S 0.85478 0.27870 0.08137 1.00000
  S16 S 0.27870 0.85478 0.41863 1.00000
  Cl1 Cl 0.06373 0.06373 0.75000 1.00000
  Cl2 Cl 0.93627 0.93627 0.25000 1.00000
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