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Ce2PrSi2S8Br

Alexandria ALEX

Alex-ID: agm010625317 · Space group: C2/c (#15)

Basic Information

Formula
Ce2PrSi2S8Br
Alex-ID
agm010625317
Elements
5
Sites
28
Space group
C2/c (#15)
Crystal system
monoclinic
Volume
674.36
ų
Cell a
8.8327
Å
Cell b
8.8327
Å
Cell c
11.0091
Å
α angle
83.83
°
β angle
96.17
°
γ angle
127.74
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ce2PrSi2S8Br
Ce
4.00 · 14.3%
Pr
2.00 · 7.1%
Si
4.00 · 14.3%
S
16.00 · 57.1%
Br
2.00 · 7.1%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-1.8341
eV/atom
Corrected total energy
-175.7364
eV
Raw total energy
-165.1211
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0052
eV
DOS at Fermi level
31.2419
Total magnetisation
4.0005
μB

Additional Information

Prototype ID

ABC2D2E8_41_spg15

Decomposition

Ce2PrSi2S8Br

Computed at

2024-12-30 01:22:25

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010625317).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010625317
data_agm010625317
_cell_length_a     8.83269
_cell_length_b     8.83269
_cell_length_c     11.00907
_cell_angle_alpha  83.82586
_cell_angle_beta   96.17414
_cell_angle_gamma  127.73511
_cell_volume       674.35889
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ce1 Ce 0.68128 0.07428 0.31502 1.00000
  Ce2 Ce 0.07428 0.68128 0.18498 1.00000
  Ce3 Ce 0.31872 0.92572 0.68498 1.00000
  Ce4 Ce 0.92572 0.31872 0.81502 1.00000
  Pr1 Pr 0.39409 0.39409 0.25000 1.00000
  Pr2 Pr 0.60591 0.60591 0.75000 1.00000
  Si1 Si 0.37365 0.69505 0.96835 1.00000
  Si2 Si 0.69505 0.37365 0.53165 1.00000
  Si3 Si 0.62635 0.30495 0.03165 1.00000
  Si4 Si 0.30495 0.62635 0.46835 1.00000
  S1 S 0.60177 0.89438 0.85331 1.00000
  S2 S 0.89438 0.60177 0.64669 1.00000
  S3 S 0.39823 0.10562 0.14669 1.00000
  S4 S 0.10562 0.39823 0.35331 1.00000
  S5 S 0.27828 0.41239 0.94763 1.00000
  S6 S 0.41239 0.27828 0.55237 1.00000
  S7 S 0.72172 0.58761 0.05237 1.00000
  S8 S 0.58761 0.72172 0.44763 1.00000
  S9 S 0.44553 0.74320 0.15813 1.00000
  S10 S 0.74320 0.44553 0.34187 1.00000
  S11 S 0.55447 0.25680 0.84187 1.00000
  S12 S 0.25680 0.55447 0.65813 1.00000
  S13 S 0.14512 0.71315 0.91542 1.00000
  S14 S 0.71315 0.14512 0.58458 1.00000
  S15 S 0.85488 0.28685 0.08458 1.00000
  S16 S 0.28685 0.85488 0.41542 1.00000
  Br1 Br 0.00207 0.00207 0.75000 1.00000
  Br2 Br 0.99793 0.99793 0.25000 1.00000
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