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K4MgSi4HgO12

Alexandria ALEX

Alex-ID: agm010700906 · Space group: C2 (#5)

Basic Information

Formula
K4MgSi4HgO12
Alex-ID
agm010700906
Elements
5
Sites
22
Space group
C2 (#5)
Crystal system
monoclinic
Volume
351.86
ų
Cell a
5.3499
Å
Cell b
5.3499
Å
Cell c
12.8285
Å
α angle
78.25
°
β angle
78.25
°
γ angle
88.88
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
K4MgSi4HgO12
K
4.00 · 18.2%
Mg
1.00 · 4.5%
Si
4.00 · 18.2%
Hg
1.00 · 4.5%
O
12.00 · 54.5%

Energy & Stability

Energy above hull
0.0138
eV/atom
Formation energy
-2.7131
eV/atom
Corrected total energy
-147.2429
eV
Raw total energy
-138.8154
eV

Electronic Structure

Indirect band gap
2.7712
eV
Direct band gap
3.0901
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC4D4E12_17_spg5

Decomposition

K2Mg(SiO3)2 K2Si2O5 HgO

Computed at

2024-03-11 05:04:48.077300

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010700906).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010700906
data_agm010700906
_cell_length_a     5.34989
_cell_length_b     5.34989
_cell_length_c     12.82847
_cell_angle_alpha  78.25292
_cell_angle_beta   78.25292
_cell_angle_gamma  88.87973
_cell_volume       351.85739
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  K1 K 0.70694 0.71036 0.13851 1.00000
  K2 K 0.28964 0.29306 0.86149 1.00000
  K3 K 0.61494 0.13124 0.35390 1.00000
  K4 K 0.86876 0.38506 0.64610 1.00000
  Mg1 Mg 0.73225 0.26775 0.00000 1.00000
  Si1 Si 0.16647 0.22143 0.16564 1.00000
  Si2 Si 0.77857 0.83353 0.83436 1.00000
  Si3 Si 0.09582 0.64671 0.31963 1.00000
  Si4 Si 0.35329 0.90418 0.68037 1.00000
  Hg1 Hg 0.42622 0.57378 0.50000 1.00000
  O1 O 0.03079 0.28413 0.06251 1.00000
  O2 O 0.71587 0.96921 0.93749 1.00000
  O3 O 0.89191 0.60548 0.43265 1.00000
  O4 O 0.39452 0.10809 0.56735 1.00000
  O5 O 0.06086 0.93042 0.23951 1.00000
  O6 O 0.06958 0.93914 0.76049 1.00000
  O7 O 0.05441 0.42639 0.24773 1.00000
  O8 O 0.57361 0.94559 0.75227 1.00000
  O9 O 0.47445 0.23742 0.13514 1.00000
  O10 O 0.76258 0.52555 0.86486 1.00000
  O11 O 0.39596 0.63123 0.33455 1.00000
  O12 O 0.36877 0.60404 0.66545 1.00000
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