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BaLa2Si2O7F2

Alexandria ALEX

Alex-ID: agm010704435 · Space group: P-1 (#2)

Basic Information

Formula
BaLa2Si2O7F2
Alex-ID
agm010704435
Elements
5
Sites
28
Space group
P-1 (#2)
Crystal system
triclinic
Volume
427.19
ų
Cell a
5.3810
Å
Cell b
7.1548
Å
Cell c
12.1731
Å
α angle
93.33
°
β angle
101.84
°
γ angle
109.87
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
BaLa2Si2O7F2
Ba
2.00 · 7.1%
La
4.00 · 14.3%
Si
4.00 · 14.3%
O
14.00 · 50.0%
F
4.00 · 14.3%

Energy & Stability

Energy above hull
0.0089
eV/atom
Formation energy
-3.7762
eV/atom
Corrected total energy
-226.0785
eV
Raw total energy
-216.2465
eV

Electronic Structure

Indirect band gap
4.7813
eV
Direct band gap
4.7897
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D2E7_4_spg2

Decomposition

La2Si2O7 BaF2

Computed at

2024-12-23 05:21:36

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010704435).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010704435
data_agm010704435
_cell_length_a     5.38099
_cell_length_b     7.15483
_cell_length_c     12.17307
_cell_angle_alpha  93.33134
_cell_angle_beta   101.84185
_cell_angle_gamma  109.87343
_cell_volume       427.19024
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.59595 0.38088 0.75087 1.00000
  Ba2 Ba 0.40405 0.61912 0.24913 1.00000
  La1 La 0.31794 0.78686 0.88085 1.00000
  La2 La 0.68206 0.21314 0.11915 1.00000
  La3 La 0.18656 0.80547 0.54469 1.00000
  La4 La 0.81344 0.19453 0.45531 1.00000
  Si1 Si 0.77398 0.93256 0.72281 1.00000
  Si2 Si 0.22602 0.06744 0.27719 1.00000
  Si3 Si 0.12626 0.24571 0.92682 1.00000
  Si4 Si 0.87374 0.75429 0.07318 1.00000
  O1 O 0.82773 0.07088 0.84871 1.00000
  O2 O 0.17227 0.92912 0.15129 1.00000
  O3 O 0.36925 0.15068 0.93564 1.00000
  O4 O 0.63075 0.84932 0.06436 1.00000
  O5 O 0.08819 0.30481 0.05165 1.00000
  O6 O 0.91181 0.69519 0.94835 1.00000
  O7 O 0.18778 0.43060 0.85062 1.00000
  O8 O 0.81222 0.56940 0.14938 1.00000
  O9 O 0.49908 0.73360 0.71589 1.00000
  O10 O 0.50092 0.26640 0.28411 1.00000
  O11 O 0.67489 0.05434 0.62343 1.00000
  O12 O 0.32511 0.94566 0.37657 1.00000
  O13 O 0.03950 0.87551 0.71732 1.00000
  O14 O 0.96050 0.12449 0.28268 1.00000
  F1 F 0.77809 0.82497 0.43765 1.00000
  F2 F 0.22191 0.17503 0.56235 1.00000
  F3 F 0.15107 0.51763 0.42233 1.00000
  F4 F 0.84893 0.48237 0.57767 1.00000
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