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Cs4K2Si2NiO8

Alexandria ALEX

Alex-ID: agm010766720 · Space group: P4_2/mnm (#136)

Basic Information

Formula
Cs4K2Si2NiO8
Alex-ID
agm010766720
Elements
5
Sites
34
Space group
P4_2/mnm (#136)
Crystal system
tetragonal
Volume
698.13
ų
Cell a
10.6243
Å
Cell b
10.6243
Å
Cell c
6.1849
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Cs4K2Si2NiO8
Cs
8.00 · 23.5%
K
4.00 · 11.8%
Si
4.00 · 11.8%
Ni
2.00 · 5.9%
O
16.00 · 47.1%

Energy & Stability

Energy above hull
0.0035
eV/atom
Formation energy
-2.2488
eV/atom
Corrected total energy
-200.3097
eV
Raw total energy
-184.7451
eV

Electronic Structure

Indirect band gap
2.4763
eV
Direct band gap
2.4784
eV
DOS at Fermi level
0.0000
Total magnetisation
3.9979
μB

Additional Information

Prototype ID

AB2C2D4E8_3_spg136

Decomposition

Cs6Si2NiO8 K6Si2O7 NiO

Computed at

2024-08-25 00:02:28.977463

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010766720).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm010766720
data_agm010766720
_cell_length_a     10.62429
_cell_length_b     10.62429
_cell_length_c     6.18493
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       698.12734
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.38725 0.86028 0.00000 1.00000
  Cs2 Cs 0.61275 0.13972 0.00000 1.00000
  Cs3 Cs 0.86028 0.38725 0.00000 1.00000
  Cs4 Cs 0.88725 0.63972 0.50000 1.00000
  Cs5 Cs 0.13972 0.61275 0.00000 1.00000
  Cs6 Cs 0.36028 0.11275 0.50000 1.00000
  Cs7 Cs 0.11275 0.36028 0.50000 1.00000
  Cs8 Cs 0.63972 0.88725 0.50000 1.00000
  K1 K 0.89680 0.10320 0.50000 1.00000
  K2 K 0.39680 0.39680 0.00000 1.00000
  K3 K 0.60320 0.60320 0.00000 1.00000
  K4 K 0.10320 0.89680 0.50000 1.00000
  Si1 Si 0.82357 0.82357 0.00000 1.00000
  Si2 Si 0.32357 0.67643 0.50000 1.00000
  Si3 Si 0.17643 0.17643 0.00000 1.00000
  Si4 Si 0.67643 0.32357 0.50000 1.00000
  Ni1 Ni 0.50000 0.50000 0.50000 1.00000
  Ni2 Ni 0.00000 0.00000 0.00000 1.00000
  O1 O 0.89744 0.89744 0.20652 1.00000
  O2 O 0.10256 0.10256 0.79348 1.00000
  O3 O 0.85169 0.67113 0.00000 1.00000
  O4 O 0.60256 0.39744 0.29348 1.00000
  O5 O 0.82887 0.35169 0.50000 1.00000
  O6 O 0.60256 0.39744 0.70652 1.00000
  O7 O 0.39744 0.60256 0.29348 1.00000
  O8 O 0.64831 0.17113 0.50000 1.00000
  O9 O 0.67113 0.85169 0.00000 1.00000
  O10 O 0.89744 0.89744 0.79348 1.00000
  O11 O 0.14831 0.32887 0.00000 1.00000
  O12 O 0.10256 0.10256 0.20652 1.00000
  O13 O 0.35169 0.82887 0.50000 1.00000
  O14 O 0.39744 0.60256 0.70652 1.00000
  O15 O 0.32887 0.14831 0.00000 1.00000
  O16 O 0.17113 0.64831 0.50000 1.00000
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