Rb4Ce2Th(SiO4)4

Alexandria ALEX

Alex-ID: agm010904572 · 空间群: P-1 (#2)

Alexandria Database API

基础信息

化学式

Rb4Ce2Th(SiO4)4

Alex-ID

agm010904572

元素数

位点数

空间群

P-1 (#2)

晶系

triclinic

体积

464.23

Å³

晶胞参数 a

7.0168

晶胞参数 b

7.1040

晶胞参数 c

10.2669

α 角

89.02

β 角

102.45

γ 角

111.40

组成

元素组成（原子分数）

组成信息

化学式

Rb4Ce2Th(SiO4)4

4.00 · 14.8%

2.00 · 7.4%

1.00 · 3.7%

4.00 · 14.8%

16.00 · 59.3%

能量与稳定性

凸包上方能量

0.0325

eV/atom

形成能

-3.2763

eV/atom

校正后总能量

-212.6430

原始总能量

-201.4064

电子结构

间接带隙

1.8248

直接带隙

1.8277

费米能级态密度

0.0000

总磁矩

0.0000

μB

其他信息

原型 ID

AB2C4D4E16_13_spg2

分解产物

Rb2CeSi2O7 ThO2

计算时间

2024-05-31 10:11:53.399019

引用参考

Alexandria 官方页面

https://alexandria.icams.rub.de/

参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm010904572).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX

@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick | 拖拽旋转 · 滚轮缩放 · 右键平移

原始 CIF 数据

# CIF generated by HEAS from Alexandria entry agm010904572
data_agm010904572
_cell_length_a     7.01675
_cell_length_b     7.10403
_cell_length_c     10.26691
_cell_angle_alpha  89.02313
_cell_angle_beta   102.44849
_cell_angle_gamma  111.39659
_cell_volume       464.23233
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.94604 0.24197 0.39263 1.00000
  Rb2 Rb 0.05396 0.75803 0.60737 1.00000
  Rb3 Rb 0.82946 0.15577 0.03094 1.00000
  Rb4 Rb 0.17054 0.84423 0.96906 1.00000
  Ce1 Ce 0.52645 0.30284 0.64068 1.00000
  Ce2 Ce 0.47355 0.69716 0.35932 1.00000
  Th1 Th 0.50000 0.50000 0.00000 1.00000
  Si1 Si 0.97748 0.76662 0.26510 1.00000
  Si2 Si 0.02252 0.23338 0.73490 1.00000
  Si3 Si 0.38350 0.15486 0.28011 1.00000
  Si4 Si 0.61650 0.84514 0.71989 1.00000
  O1 O 0.85121 0.65411 0.11751 1.00000
  O2 O 0.14879 0.34589 0.88249 1.00000
  O3 O 0.81668 0.78551 0.35506 1.00000
  O4 O 0.18332 0.21449 0.64494 1.00000
  O5 O 0.13308 0.65902 0.34932 1.00000
  O6 O 0.86692 0.34098 0.65068 1.00000
  O7 O 0.12632 0.00700 0.23961 1.00000
  O8 O 0.87368 0.99300 0.76039 1.00000
  O9 O 0.41336 0.34071 0.38798 1.00000
  O10 O 0.58664 0.65929 0.61202 1.00000
  O11 O 0.51850 0.02218 0.35281 1.00000
  O12 O 0.48150 0.97782 0.64719 1.00000
  O13 O 0.45132 0.23241 0.14019 1.00000
  O14 O 0.54868 0.76759 0.85981 1.00000
  O15 O 0.59739 0.34572 0.84821 1.00000
  O16 O 0.40261 0.65428 0.15179 1.00000

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