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Np3Ga3Ru2

Alexandria ALEX

Alex-ID: agm012502004 · Space group: P2_1/c (#14)

Basic Information

Formula
Np3Ga3Ru2
Alex-ID
agm012502004
Elements
3
Sites
32
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
568.10
ų
Cell a
4.9927
Å
Cell b
9.5977
Å
Cell c
11.8686
Å
α angle
87.30
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Np3Ga3Ru2
Np
12.00 · 37.5%
Ga
12.00 · 37.5%
Ru
8.00 · 25.0%

Energy & Stability

Energy above hull
0.1000
eV/atom
Formation energy
-0.1540
eV/atom
Corrected total energy
-270.7765
eV
Raw total energy
-270.7765
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0035
eV
DOS at Fermi level
50.7262
Total magnetisation
7.7590
μB

Additional Information

Prototype ID

A2B3C3_8_spg62

Decomposition

NpGa3Ru4 Ga2Ru Np

Computed at

2024-09-14 01:16:39.020161

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm012502004).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm012502004
data_agm012502004
_cell_length_a     4.99274
_cell_length_b     9.59772
_cell_length_c     11.86855
_cell_angle_alpha  87.30462
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       568.09965
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Np1 Np 0.78438 0.60872 0.35979 1.00000
  Np2 Np 0.28438 0.89128 0.64021 1.00000
  Np3 Np 0.00927 0.42652 0.82237 1.00000
  Np4 Np 0.50927 0.07348 0.17763 1.00000
  Np5 Np 0.21562 0.39128 0.64021 1.00000
  Np6 Np 0.71562 0.10872 0.35979 1.00000
  Np7 Np 0.99073 0.57348 0.17763 1.00000
  Np8 Np 0.49073 0.92652 0.82237 1.00000
  Np9 Np 0.42615 0.68221 0.22642 1.00000
  Np10 Np 0.92615 0.81779 0.77358 1.00000
  Np11 Np 0.57385 0.31779 0.77358 1.00000
  Np12 Np 0.07385 0.18221 0.22642 1.00000
  Ga1 Ga 0.96719 0.87379 0.24573 1.00000
  Ga2 Ga 0.46719 0.62621 0.75427 1.00000
  Ga3 Ga 0.03281 0.12621 0.75427 1.00000
  Ga4 Ga 0.53281 0.37379 0.24573 1.00000
  Ga5 Ga 0.30127 0.64796 0.49320 1.00000
  Ga6 Ga 0.80127 0.85204 0.50680 1.00000
  Ga7 Ga 0.74576 0.32977 0.03595 1.00000
  Ga8 Ga 0.24576 0.17023 0.96405 1.00000
  Ga9 Ga 0.69873 0.35204 0.50680 1.00000
  Ga10 Ga 0.19873 0.14796 0.49320 1.00000
  Ga11 Ga 0.25424 0.67023 0.96405 1.00000
  Ga12 Ga 0.75424 0.82977 0.03595 1.00000
  Ru1 Ru 0.30717 0.90329 0.41517 1.00000
  Ru2 Ru 0.80717 0.59671 0.58483 1.00000
  Ru3 Ru 0.75849 0.08404 0.94967 1.00000
  Ru4 Ru 0.25849 0.41596 0.05033 1.00000
  Ru5 Ru 0.69283 0.09671 0.58483 1.00000
  Ru6 Ru 0.19283 0.40329 0.41517 1.00000
  Ru7 Ru 0.24151 0.91596 0.05033 1.00000
  Ru8 Ru 0.74151 0.58404 0.94967 1.00000
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