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Ga3NiSe3

Alexandria ALEX

Alex-ID: agm012658091 · Space group: P2_1/c (#14)

Basic Information

Formula
Ga3NiSe3
Alex-ID
agm012658091
Elements
3
Sites
28
Space group
P2_1/c (#14)
Crystal system
monoclinic
Volume
820.36
ų
Cell a
7.7328
Å
Cell b
10.1994
Å
Cell c
12.1944
Å
α angle
58.54
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga3NiSe3
Ga
12.00 · 42.9%
Ni
4.00 · 14.3%
Se
12.00 · 42.9%

Energy & Stability

Energy above hull
0.2637
eV/atom
Formation energy
-0.2766
eV/atom
Corrected total energy
-109.1205
eV
Raw total energy
-109.1205
eV

Electronic Structure

Indirect band gap
0.2439
eV
Direct band gap
0.2439
eV
DOS at Fermi level
4.8063
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3C3_2838_spg14

Decomposition

Ga7Se10 Ga9Ni13 GaSe

Computed at

2024-06-04 23:44:48.035080

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm012658091).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm012658091
data_agm012658091
_cell_length_a     7.73283
_cell_length_b     10.19937
_cell_length_c     12.19441
_cell_angle_alpha  58.53535
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       820.35588
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.07489 0.01420 0.68479 1.00000
  Ga2 Ga 0.57489 0.98580 0.81521 1.00000
  Ga3 Ga 0.92511 0.98580 0.31521 1.00000
  Ga4 Ga 0.42511 0.01420 0.18479 1.00000
  Ga5 Ga 0.44855 0.65754 0.00835 1.00000
  Ga6 Ga 0.94855 0.34246 0.49165 1.00000
  Ga7 Ga 0.55145 0.34246 0.99165 1.00000
  Ga8 Ga 0.05145 0.65754 0.50835 1.00000
  Ga9 Ga 0.21157 0.17098 0.76423 1.00000
  Ga10 Ga 0.71157 0.82902 0.73577 1.00000
  Ga11 Ga 0.78843 0.82902 0.23577 1.00000
  Ga12 Ga 0.28843 0.17098 0.26423 1.00000
  Ni1 Ni 0.51978 0.13644 0.96615 1.00000
  Ni2 Ni 0.01978 0.86356 0.53385 1.00000
  Ni3 Ni 0.48022 0.86356 0.03385 1.00000
  Ni4 Ni 0.98022 0.13644 0.46615 1.00000
  Se1 Se 0.73595 0.98065 0.49604 1.00000
  Se2 Se 0.23595 0.01935 0.00396 1.00000
  Se3 Se 0.26405 0.01935 0.50396 1.00000
  Se4 Se 0.76405 0.98065 0.99604 1.00000
  Se5 Se 0.99024 0.37966 0.67926 1.00000
  Se6 Se 0.49024 0.62034 0.82074 1.00000
  Se7 Se 0.00976 0.62034 0.32074 1.00000
  Se8 Se 0.50976 0.37966 0.17926 1.00000
  Se9 Se 0.50988 0.26007 0.72054 1.00000
  Se10 Se 0.00988 0.73993 0.77946 1.00000
  Se11 Se 0.49012 0.73993 0.27946 1.00000
  Se12 Se 0.99012 0.26007 0.22054 1.00000
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