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Pu4ThSi4

Alexandria ALEX

Alex-ID: agm014091097 · 空间群: P2_12_12_1 (#19)

基础信息

化学式
Pu4ThSi4
Alex-ID
agm014091097
元素数
3
位点数
36
空间群
P2_12_12_1 (#19)
晶系
orthorhombic
体积
782.68
ų
晶胞参数 a
7.1890
Å
晶胞参数 b
7.6557
Å
晶胞参数 c
14.2209
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Pu4ThSi4
Pu
16.00 · 44.4%
Th
4.00 · 11.1%
Si
16.00 · 44.4%

能量与稳定性

凸包上方能量
0.0245
eV/atom
形成能
-0.4385
eV/atom
校正后总能量
-361.5534
eV
原始总能量
-361.5534
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0030
eV
费米能级态密度
99.6942
总磁矩
46.0458
μB

其他信息

原型 ID

AB4C4_968_spg19

分解产物

Pu2ThSi4 Pu5Si3 ThSi

计算时间

2024-10-02 12:29:03.129025

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm014091097).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm014091097
data_agm014091097
_cell_length_a     7.18901
_cell_length_b     7.65572
_cell_length_c     14.22094
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       782.67807
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Pu1 Pu 0.35630 0.05059 0.49822 1.00000
  Pu2 Pu 0.85630 0.44941 0.50178 1.00000
  Pu3 Pu 0.14370 0.94941 0.99822 1.00000
  Pu4 Pu 0.64370 0.55059 0.00178 1.00000
  Pu5 Pu 0.41646 0.82985 0.11333 1.00000
  Pu6 Pu 0.91646 0.67015 0.88667 1.00000
  Pu7 Pu 0.08354 0.17015 0.61333 1.00000
  Pu8 Pu 0.58354 0.32985 0.38667 1.00000
  Pu9 Pu 0.09888 0.17451 0.38311 1.00000
  Pu10 Pu 0.59888 0.32549 0.61689 1.00000
  Pu11 Pu 0.40112 0.82549 0.88311 1.00000
  Pu12 Pu 0.90112 0.67451 0.11689 1.00000
  Pu13 Pu 0.76050 0.18810 0.83910 1.00000
  Pu14 Pu 0.26050 0.31190 0.16090 1.00000
  Pu15 Pu 0.73950 0.81190 0.33910 1.00000
  Pu16 Pu 0.23950 0.68810 0.66090 1.00000
  Th1 Th 0.74098 0.82288 0.66164 1.00000
  Th2 Th 0.24098 0.67712 0.33836 1.00000
  Th3 Th 0.75902 0.17712 0.16164 1.00000
  Th4 Th 0.25902 0.32288 0.83836 1.00000
  Si1 Si 0.58497 0.52828 0.21415 1.00000
  Si2 Si 0.08497 0.97172 0.78585 1.00000
  Si3 Si 0.91503 0.47172 0.71415 1.00000
  Si4 Si 0.41503 0.02828 0.28585 1.00000
  Si5 Si 0.90437 0.46532 0.28797 1.00000
  Si6 Si 0.40437 0.03468 0.71203 1.00000
  Si7 Si 0.59563 0.53468 0.78797 1.00000
  Si8 Si 0.09563 0.96532 0.21203 1.00000
  Si9 Si 0.51621 0.66092 0.50157 1.00000
  Si10 Si 0.01621 0.83908 0.49843 1.00000
  Si11 Si 0.98379 0.33908 0.00157 1.00000
  Si12 Si 0.48379 0.16092 0.99843 1.00000
  Si13 Si 0.77026 0.06412 0.49301 1.00000
  Si14 Si 0.27026 0.43588 0.50699 1.00000
  Si15 Si 0.72974 0.93588 0.99301 1.00000
  Si16 Si 0.22974 0.56412 0.00699 1.00000
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