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Ho(TmGe)4

Alexandria ALEX

Alex-ID: agm014728673 · 空间群: P2_12_12_1 (#19)

基础信息

化学式
Ho(TmGe)4
Alex-ID
agm014728673
元素数
3
位点数
36
空间群
P2_12_12_1 (#19)
晶系
orthorhombic
体积
837.17
ų
晶胞参数 a
7.5502
Å
晶胞参数 b
7.6366
Å
晶胞参数 c
14.5197
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Ho(TmGe)4
Ho
4.00 · 11.1%
Tm
16.00 · 44.4%
Ge
16.00 · 44.4%

能量与稳定性

凸包上方能量
0.0006
eV/atom
形成能
-0.8564
eV/atom
校正后总能量
-194.5665
eV
原始总能量
-194.5665
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
16.4740
总磁矩
0.0000
μB

其他信息

原型 ID

AB4C4_63_spg19

分解产物

Ho2Tm3Ge4 Tm5Ge4

计算时间

2024-11-09 22:55:03.353409

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm014728673).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm014728673
data_agm014728673
_cell_length_a     7.55023
_cell_length_b     7.63655
_cell_length_c     14.51969
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       837.17161
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.27615 0.32274 0.65007 1.00000
  Ho2 Ho 0.77615 0.17726 0.34993 1.00000
  Ho3 Ho 0.22385 0.67726 0.15007 1.00000
  Ho4 Ho 0.72385 0.82274 0.84993 1.00000
  Tm1 Tm 0.96129 0.50164 0.50006 1.00000
  Tm2 Tm 0.46129 0.99836 0.49994 1.00000
  Tm3 Tm 0.53871 0.49836 0.00006 1.00000
  Tm4 Tm 0.03871 0.00164 0.99994 1.00000
  Tm5 Tm 0.87480 0.33926 0.13166 1.00000
  Tm6 Tm 0.37480 0.16074 0.86834 1.00000
  Tm7 Tm 0.62520 0.66074 0.63166 1.00000
  Tm8 Tm 0.12520 0.83926 0.36834 1.00000
  Tm9 Tm 0.62597 0.66079 0.36827 1.00000
  Tm10 Tm 0.12597 0.83921 0.63173 1.00000
  Tm11 Tm 0.87403 0.33921 0.86827 1.00000
  Tm12 Tm 0.37403 0.16079 0.13173 1.00000
  Tm13 Tm 0.22219 0.67628 0.85113 1.00000
  Tm14 Tm 0.72219 0.82372 0.14887 1.00000
  Tm15 Tm 0.27781 0.32372 0.35113 1.00000
  Tm16 Tm 0.77781 0.17628 0.64887 1.00000
  Ge1 Ge 0.03244 0.03292 0.20582 1.00000
  Ge2 Ge 0.53244 0.46708 0.79418 1.00000
  Ge3 Ge 0.46756 0.96708 0.70582 1.00000
  Ge4 Ge 0.96756 0.53292 0.29418 1.00000
  Ge5 Ge 0.46577 0.96495 0.29324 1.00000
  Ge6 Ge 0.96577 0.53505 0.70676 1.00000
  Ge7 Ge 0.03423 0.03505 0.79324 1.00000
  Ge8 Ge 0.53423 0.46495 0.20676 1.00000
  Ge9 Ge 0.08409 0.13955 0.49975 1.00000
  Ge10 Ge 0.58409 0.36045 0.50025 1.00000
  Ge11 Ge 0.41591 0.86045 0.99975 1.00000
  Ge12 Ge 0.91591 0.63955 0.00025 1.00000
  Ge13 Ge 0.32766 0.61953 0.49991 1.00000
  Ge14 Ge 0.82766 0.88047 0.50009 1.00000
  Ge15 Ge 0.17234 0.38047 0.99991 1.00000
  Ge16 Ge 0.67234 0.11953 0.00009 1.00000
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