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Y2GaSi

Alexandria ALEX

Alex-ID: agm014836588 · 空间群: Pmc2_1 (#26)

基础信息

化学式
Y2GaSi
Alex-ID
agm014836588
元素数
3
位点数
8
空间群
Pmc2_1 (#26)
晶系
orthorhombic
体积
183.23
ų
晶胞参数 a
3.9683
Å
晶胞参数 b
5.7787
Å
晶胞参数 c
7.9902
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Y2GaSi
Y
4.00 · 50.0%
Ga
2.00 · 25.0%
Si
2.00 · 25.0%

能量与稳定性

凸包上方能量
0.0101
eV/atom
形成能
-0.7748
eV/atom
校正后总能量
-48.9553
eV
原始总能量
-48.9553
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0001
eV
费米能级态密度
7.3410
总磁矩
0.0005
μB

其他信息

原型 ID

ABC2_538_spg26

分解产物

Y2GaSi

计算时间

2024-12-06 06:32:23

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm014836588).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm014836588
data_agm014836588
_cell_length_a     3.96827
_cell_length_b     5.77873
_cell_length_c     7.99024
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       183.22866
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Y1 Y 0.50000 0.62926 0.67911 1.00000
  Y2 Y 0.50000 0.37074 0.17911 1.00000
  Y3 Y 0.00000 0.86286 0.32133 1.00000
  Y4 Y 0.00000 0.13714 0.82133 1.00000
  Ga1 Ga 0.50000 0.11953 0.53802 1.00000
  Ga2 Ga 0.50000 0.88047 0.03802 1.00000
  Si1 Si 0.00000 0.37662 0.46181 1.00000
  Si2 Si 0.00000 0.62338 0.96181 1.00000
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