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Sc5Ga3Si4Pd3

Alexandria ALEX

Alex-ID: agm016595683 · Space group: Pmmn (#59)

Basic Information

Formula
Sc5Ga3Si4Pd3
Alex-ID
agm016595683
Elements
4
Sites
30
Space group
Pmmn (#59)
Crystal system
orthorhombic
Volume
507.97
ų
Cell a
4.0618
Å
Cell b
6.6238
Å
Cell c
18.8804
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Sc5Ga3Si4Pd3
Sc
10.00 · 33.3%
Ga
6.00 · 20.0%
Si
8.00 · 26.7%
Pd
6.00 · 20.0%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.8718
eV/atom
Corrected total energy
-182.1862
eV
Raw total energy
-182.1862
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0245
eV
DOS at Fermi level
9.1458
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

A3B3C4D5_1_spg59

Decomposition

Sc5Ga3Si4Pd3

Computed at

2024-10-26 04:10:48.131918

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm016595683).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm016595683
data_agm016595683
_cell_length_a     4.06182
_cell_length_b     6.62378
_cell_length_c     18.88040
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       507.96895
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sc1 Sc 0.00000 0.49007 0.62688 1.00000
  Sc2 Sc 0.50000 0.01625 0.82428 1.00000
  Sc3 Sc 0.00000 0.98375 0.67572 1.00000
  Sc4 Sc 0.50000 0.14371 0.00000 1.00000
  Sc5 Sc 0.00000 0.85629 0.50000 1.00000
  Sc6 Sc 0.00000 0.98375 0.32428 1.00000
  Sc7 Sc 0.50000 0.50993 0.87312 1.00000
  Sc8 Sc 0.00000 0.49007 0.37312 1.00000
  Sc9 Sc 0.50000 0.01625 0.17572 1.00000
  Sc10 Sc 0.50000 0.50993 0.12688 1.00000
  Ga1 Ga 0.50000 0.15572 0.57753 1.00000
  Ga2 Ga 0.50000 0.15572 0.42247 1.00000
  Ga3 Ga 0.00000 0.47041 0.00000 1.00000
  Ga4 Ga 0.50000 0.52959 0.50000 1.00000
  Ga5 Ga 0.00000 0.84428 0.92247 1.00000
  Ga6 Ga 0.00000 0.84428 0.07753 1.00000
  Si1 Si 0.50000 0.77576 0.60291 1.00000
  Si2 Si 0.50000 0.26926 0.29465 1.00000
  Si3 Si 0.00000 0.73074 0.20535 1.00000
  Si4 Si 0.00000 0.22424 0.10291 1.00000
  Si5 Si 0.00000 0.22424 0.89709 1.00000
  Si6 Si 0.00000 0.73074 0.79465 1.00000
  Si7 Si 0.50000 0.26926 0.70535 1.00000
  Si8 Si 0.50000 0.77576 0.39709 1.00000
  Pd1 Pd 0.00000 0.34896 0.77483 1.00000
  Pd2 Pd 0.50000 0.65104 0.72517 1.00000
  Pd3 Pd 0.50000 0.72371 0.00000 1.00000
  Pd4 Pd 0.00000 0.34896 0.22517 1.00000
  Pd5 Pd 0.00000 0.27629 0.50000 1.00000
  Pd6 Pd 0.50000 0.65104 0.27483 1.00000
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