Ac3GeS2

Alexandria ALEX

Alex-ID: agm017133408 · 空间群: C2/c (#15)

Alexandria Database API

基础信息

化学式

Ac3GeS2

Alex-ID

agm017133408

元素数

位点数

空间群

C2/c (#15)

晶系

monoclinic

体积

368.61

Å³

晶胞参数 a

7.6665

晶胞参数 b

7.6665

晶胞参数 c

7.7013

α 角

80.38

β 角

99.62

γ 角

59.80

组成

元素组成（原子分数）

组成信息

化学式

Ac3GeS2

6.00 · 50.0%

2.00 · 16.7%

4.00 · 33.3%

能量与稳定性

凸包上方能量

0.0000

eV/atom

形成能

-1.8629

eV/atom

校正后总能量

-72.7503

原始总能量

-70.0965

电子结构

间接带隙

0.0000

直接带隙

0.0000

费米能级态密度

2.6944

总磁矩

0.0000

μB

其他信息

原型 ID

AB2C3_5_spg15

分解产物

Ac3GeS2

计算时间

2025-02-03 05:59:54

引用参考

Alexandria 官方页面

https://alexandria.icams.rub.de/

参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm017133408).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX

@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

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样式: Ball & Stick | 拖拽旋转 · 滚轮缩放 · 右键平移

原始 CIF 数据

# CIF generated by HEAS from Alexandria entry agm017133408
data_agm017133408
_cell_length_a     7.66654
_cell_length_b     7.66654
_cell_length_c     7.70134
_cell_angle_alpha  80.38289
_cell_angle_beta   99.61711
_cell_angle_gamma  59.80319
_cell_volume       368.60624
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ac1 Ac 0.16549 0.66792 0.99943 1.00000
  Ac2 Ac 0.33208 0.83451 0.49943 1.00000
  Ac3 Ac 0.50000 0.00000 0.00000 1.00000
  Ac4 Ac 0.83451 0.33208 0.00057 1.00000
  Ac5 Ac 0.00000 0.50000 0.50000 1.00000
  Ac6 Ac 0.66792 0.16549 0.50057 1.00000
  Ge1 Ge 0.58395 0.58395 0.25000 1.00000
  Ge2 Ge 0.41605 0.41605 0.75000 1.00000
  S1 S 0.91647 0.91647 0.25000 1.00000
  S2 S 0.25116 0.25116 0.25000 1.00000
  S3 S 0.08353 0.08353 0.75000 1.00000
  S4 S 0.74884 0.74884 0.75000 1.00000

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