InGa3As4

Alexandria ALEX

Alex-ID: agm017667465 · 空间群: I-42m (#121)

Alexandria Database API

基础信息

化学式

InGa3As4

Alex-ID

agm017667465

元素数

位点数

空间群

I-42m (#121)

晶系

tetragonal

体积

200.77

Å³

晶胞参数 a

7.1695

晶胞参数 b

7.1695

晶胞参数 c

7.1695

α 角

131.78

β 角

131.78

γ 角

70.58

组成

元素组成（原子分数）

组成信息

化学式

InGa3As4

1.00 · 12.5%

3.00 · 37.5%

4.00 · 50.0%

能量与稳定性

凸包上方能量

0.0088

eV/atom

形成能

-0.3120

eV/atom

校正后总能量

-32.9515

原始总能量

-32.9515

电子结构

间接带隙

0.0000

直接带隙

0.0000

费米能级态密度

0.3964

总磁矩

0.0000

μB

其他信息

原型 ID

AB3C4_6_spg217

分解产物

GaAs InAs

计算时间

2024-12-18 04:17:25

引用参考

Alexandria 官方页面

https://alexandria.icams.rub.de/

参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm017667465).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX

@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick | 拖拽旋转 · 滚轮缩放 · 右键平移

原始 CIF 数据

# CIF generated by HEAS from Alexandria entry agm017667465
data_agm017667465
_cell_length_a     7.16947
_cell_length_b     7.16947
_cell_length_c     7.16947
_cell_angle_alpha  131.78000
_cell_angle_beta   131.78000
_cell_angle_gamma  70.57672
_cell_volume       200.77477
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  In1 In 0.50000 0.50000 0.00000 1.00000
  Ga1 Ga 0.00000 0.00000 0.00000 1.00000
  Ga2 Ga 0.25000 0.75000 0.50000 1.00000
  Ga3 Ga 0.75000 0.25000 0.50000 1.00000
  As1 As 0.89195 0.36753 0.00000 1.00000
  As2 As 0.36753 0.89195 0.00000 1.00000
  As3 As 0.63247 0.63247 0.52442 1.00000
  As4 As 0.10805 0.10805 0.47558 1.00000

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