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Sm4V5(Si2O11)2

Alexandria ALEX

Alex-ID: agm018064013 · Space group: C2/m (#12)

Basic Information

Formula
Sm4V5(Si2O11)2
Alex-ID
agm018064013
Elements
4
Sites
35
Space group
C2/m (#12)
Crystal system
monoclinic
Volume
415.76
ų
Cell a
7.2894
Å
Cell b
7.2894
Å
Cell c
11.0575
Å
α angle
80.50
°
β angle
99.50
°
γ angle
134.01
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Sm4V5(Si2O11)2
Sm
4.00 · 11.4%
V
5.00 · 14.3%
Si
4.00 · 11.4%
O
22.00 · 62.9%

Energy & Stability

Energy above hull
0.0152
eV/atom
Formation energy
-3.2002
eV/atom
Corrected total energy
-307.2682
eV
Raw total energy
-283.4078
eV

Electronic Structure

Indirect band gap
0.7877
eV
Direct band gap
0.7998
eV
DOS at Fermi level
-0.1557
Total magnetisation
9.0000
μB

Additional Information

Prototype ID

A4B4C5D22_1_spg12

Decomposition

V2SiO5 Sm2Si2O7 V2O3 SmVO4

Computed at

2025-04-01 04:01:39

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm018064013).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm018064013
data_agm018064013
_cell_length_a     7.28941
_cell_length_b     7.28941
_cell_length_c     11.05749
_cell_angle_alpha  80.50120
_cell_angle_beta   99.49880
_cell_angle_gamma  134.00536
_cell_volume       415.75993
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Sm1 Sm 0.07321 0.92679 0.75074 1.00000
  Sm2 Sm 0.92679 0.07321 0.24926 1.00000
  Sm3 Sm 0.35714 0.64286 0.74449 1.00000
  Sm4 Sm 0.64286 0.35714 0.25551 1.00000
  V1 V 0.50000 0.50000 0.50000 1.00000
  V2 V 0.50000 0.00000 0.00000 1.00000
  V3 V 0.50000 0.50000 0.00000 1.00000
  V4 V 0.00000 0.00000 0.00000 1.00000
  V5 V 0.00000 0.50000 0.00000 1.00000
  Si1 Si 0.86081 0.13919 0.54074 1.00000
  Si2 Si 0.13919 0.86081 0.45926 1.00000
  Si3 Si 0.70215 0.29785 0.72698 1.00000
  Si4 Si 0.29785 0.70215 0.27302 1.00000
  O1 O 0.76898 0.23102 0.61900 1.00000
  O2 O 0.23102 0.76898 0.38100 1.00000
  O3 O 0.83603 0.69276 0.40937 1.00000
  O4 O 0.69276 0.83603 0.59063 1.00000
  O5 O 0.16397 0.30724 0.59063 1.00000
  O6 O 0.30724 0.16397 0.40937 1.00000
  O7 O 0.18201 0.81799 0.60445 1.00000
  O8 O 0.81799 0.18201 0.39555 1.00000
  O9 O 0.58360 0.41640 0.66691 1.00000
  O10 O 0.41640 0.58360 0.33309 1.00000
  O11 O 0.03296 0.49006 0.19017 1.00000
  O12 O 0.49006 0.03296 0.80983 1.00000
  O13 O 0.96704 0.50994 0.80983 1.00000
  O14 O 0.65003 0.34997 0.01826 1.00000
  O15 O 0.34997 0.65003 0.98174 1.00000
  O16 O 0.85775 0.14225 0.02639 1.00000
  O17 O 0.14225 0.85775 0.97361 1.00000
  O18 O 0.50994 0.96704 0.19017 1.00000
  O19 O 0.21829 0.26488 0.86717 1.00000
  O20 O 0.73512 0.78171 0.86717 1.00000
  O21 O 0.78171 0.73512 0.13283 1.00000
  O22 O 0.26488 0.21829 0.13283 1.00000
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