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RbHoSiTe4

Alexandria ALEX

Alex-ID: agm019665874 · Space group: P2_12_12_1 (#19)

Basic Information

Formula
RbHoSiTe4
Alex-ID
agm019665874
Elements
4
Sites
28
Space group
P2_12_12_1 (#19)
Crystal system
orthorhombic
Volume
1,047.20
ų
Cell a
7.1840
Å
Cell b
7.5967
Å
Cell c
19.1884
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
RbHoSiTe4
Rb
4.00 · 14.3%
Ho
4.00 · 14.3%
Si
4.00 · 14.3%
Te
16.00 · 57.1%

Energy & Stability

Energy above hull
0.0107
eV/atom
Formation energy
-0.8118
eV/atom
Corrected total energy
-116.8735
eV
Raw total energy
-116.8735
eV

Electronic Structure

Indirect band gap
1.1617
eV
Direct band gap
1.1617
eV
DOS at Fermi level
-0.0161
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABCD4_138_spg62

Decomposition

Rb2Si2Te5 Ho2Te3

Computed at

2024-11-13 19:07:51.178748

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm019665874).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm019665874
data_agm019665874
_cell_length_a     7.18404
_cell_length_b     7.59667
_cell_length_c     19.18839
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       1047.20165
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.50528 0.99714 0.02921 1.00000
  Rb2 Rb 0.99472 0.00286 0.52921 1.00000
  Rb3 Rb 0.00528 0.50286 0.97079 1.00000
  Rb4 Rb 0.49472 0.49714 0.47079 1.00000
  Ho1 Ho 0.79092 0.02029 0.27349 1.00000
  Ho2 Ho 0.29092 0.47971 0.72651 1.00000
  Ho3 Ho 0.20908 0.52029 0.22651 1.00000
  Ho4 Ho 0.70908 0.97971 0.77349 1.00000
  Si1 Si 0.78622 0.51772 0.66649 1.00000
  Si2 Si 0.21378 0.01772 0.83351 1.00000
  Si3 Si 0.71378 0.48228 0.16649 1.00000
  Si4 Si 0.28622 0.98228 0.33351 1.00000
  Te1 Te 0.09455 0.09576 0.71354 1.00000
  Te2 Te 0.45220 0.25673 0.85656 1.00000
  Te3 Te 0.56277 0.98472 0.41347 1.00000
  Te4 Te 0.09248 0.25854 0.34871 1.00000
  Te5 Te 0.95220 0.24327 0.14344 1.00000
  Te6 Te 0.40752 0.74146 0.84871 1.00000
  Te7 Te 0.59248 0.24146 0.65129 1.00000
  Te8 Te 0.40545 0.90424 0.21354 1.00000
  Te9 Te 0.90545 0.59576 0.78646 1.00000
  Te10 Te 0.59455 0.40424 0.28646 1.00000
  Te11 Te 0.43723 0.48472 0.08653 1.00000
  Te12 Te 0.90752 0.75854 0.15129 1.00000
  Te13 Te 0.93723 0.01528 0.91347 1.00000
  Te14 Te 0.54780 0.75673 0.64344 1.00000
  Te15 Te 0.06277 0.51528 0.58653 1.00000
  Te16 Te 0.04780 0.74327 0.35656 1.00000
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