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Ba2SiSe3F2

Alexandria ALEX

Alex-ID: agm019780247 · Space group: Pnma (#62)

Basic Information

Formula
Ba2SiSe3F2
Alex-ID
agm019780247
Elements
4
Sites
32
Space group
Pnma (#62)
Crystal system
orthorhombic
Volume
808.22
ų
Cell a
6.2982
Å
Cell b
6.5917
Å
Cell c
19.4677
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ba2SiSe3F2
Ba
8.00 · 25.0%
Si
4.00 · 12.5%
Se
12.00 · 37.5%
F
8.00 · 25.0%

Energy & Stability

Energy above hull
0.0095
eV/atom
Formation energy
-2.3030
eV/atom
Corrected total energy
-164.0225
eV
Raw total energy
-164.0225
eV

Electronic Structure

Indirect band gap
2.5654
eV
Direct band gap
2.6654
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C2D3_22_spg62

Decomposition

Ba2SiSe4 BaF2 BaSiF6

Computed at

2024-11-09 19:20:17.259133

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm019780247).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm019780247
data_agm019780247
_cell_length_a     6.29821
_cell_length_b     6.59171
_cell_length_c     19.46767
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       808.21982
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ba1 Ba 0.24671 0.49377 0.42395 1.00000
  Ba2 Ba 0.74671 0.00623 0.07605 1.00000
  Ba3 Ba 0.25329 0.99377 0.57605 1.00000
  Ba4 Ba 0.75329 0.50623 0.92395 1.00000
  Ba5 Ba 0.75329 0.50623 0.57605 1.00000
  Ba6 Ba 0.25329 0.99377 0.92395 1.00000
  Ba7 Ba 0.74671 0.00623 0.42395 1.00000
  Ba8 Ba 0.24671 0.49377 0.07605 1.00000
  Si1 Si 0.15602 0.60314 0.75000 1.00000
  Si2 Si 0.65602 0.89686 0.75000 1.00000
  Si3 Si 0.34398 0.10314 0.25000 1.00000
  Si4 Si 0.84398 0.39686 0.25000 1.00000
  Se1 Se 0.74639 0.52033 0.14665 1.00000
  Se2 Se 0.77724 0.56040 0.75000 1.00000
  Se3 Se 0.72276 0.06040 0.25000 1.00000
  Se4 Se 0.22276 0.43960 0.25000 1.00000
  Se5 Se 0.24639 0.97967 0.35335 1.00000
  Se6 Se 0.75361 0.02033 0.85335 1.00000
  Se7 Se 0.25361 0.47967 0.64665 1.00000
  Se8 Se 0.25361 0.47967 0.85335 1.00000
  Se9 Se 0.74639 0.52033 0.35335 1.00000
  Se10 Se 0.24639 0.97967 0.14665 1.00000
  Se11 Se 0.27724 0.93960 0.75000 1.00000
  Se12 Se 0.75361 0.02033 0.64665 1.00000
  F1 F 0.49863 0.25287 0.99810 1.00000
  F2 F 0.99863 0.24713 0.50190 1.00000
  F3 F 0.50137 0.74713 0.49810 1.00000
  F4 F 0.49863 0.25287 0.50190 1.00000
  F5 F 0.99863 0.24713 0.99810 1.00000
  F6 F 0.00137 0.75287 0.49810 1.00000
  F7 F 0.50137 0.74713 0.00190 1.00000
  F8 F 0.00137 0.75287 0.00190 1.00000
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