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Cs3Ce(SiO3)3

Alexandria ALEX

Alex-ID: agm020653498 · 空间群: Pmc2_1 (#26)

基础信息

化学式
Cs3Ce(SiO3)3
Alex-ID
agm020653498
元素数
4
位点数
32
空间群
Pmc2_1 (#26)
晶系
orthorhombic
体积
624.04
ų
晶胞参数 a
6.1873
Å
晶胞参数 b
7.2944
Å
晶胞参数 c
13.8270
Å
α 角
90.00
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Cs3Ce(SiO3)3
Cs
6.00 · 18.8%
Ce
2.00 · 6.3%
Si
6.00 · 18.8%
O
18.00 · 56.3%

能量与稳定性

凸包上方能量
0.0000
eV/atom
形成能
-3.0662
eV/atom
校正后总能量
-236.9103
eV
原始总能量
-224.2691
eV

电子结构

间接带隙
0.0673
eV
直接带隙
0.0816
eV
费米能级态密度
7.7426
总磁矩
1.8743
μB

其他信息

原型 ID

AB3C3D9_41_spg26

分解产物

Cs3Ce(SiO3)3

计算时间

2024-08-04 13:04:26.438681

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm020653498).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm020653498
data_agm020653498
_cell_length_a     6.18729
_cell_length_b     7.29435
_cell_length_c     13.82699
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       624.04363
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.17824 0.00000 0.67940 1.00000
  Cs2 Cs 0.66258 0.50000 0.37330 1.00000
  Cs3 Cs 0.82176 0.00000 0.17940 1.00000
  Cs4 Cs 0.76831 0.00000 0.89854 1.00000
  Cs5 Cs 0.33742 0.50000 0.87330 1.00000
  Cs6 Cs 0.23169 0.00000 0.39854 1.00000
  Ce1 Ce 0.83273 0.50000 0.03857 1.00000
  Ce2 Ce 0.16727 0.50000 0.53857 1.00000
  Si1 Si 0.67844 0.77978 0.59845 1.00000
  Si2 Si 0.16583 0.50000 0.24769 1.00000
  Si3 Si 0.32156 0.22022 0.09845 1.00000
  Si4 Si 0.83417 0.50000 0.74769 1.00000
  Si5 Si 0.32156 0.77978 0.09845 1.00000
  Si6 Si 0.67844 0.22022 0.59845 1.00000
  O1 O 0.44692 0.72983 0.54869 1.00000
  O2 O 0.44692 0.27017 0.54869 1.00000
  O3 O 0.82975 0.50000 0.86519 1.00000
  O4 O 0.89270 0.73417 0.53459 1.00000
  O5 O 0.69689 0.68379 0.70892 1.00000
  O6 O 0.32400 0.00000 0.13065 1.00000
  O7 O 0.89270 0.26583 0.53459 1.00000
  O8 O 0.55308 0.27017 0.04869 1.00000
  O9 O 0.30311 0.68379 0.20892 1.00000
  O10 O 0.69689 0.31621 0.70892 1.00000
  O11 O 0.55308 0.72983 0.04869 1.00000
  O12 O 0.10730 0.73417 0.03459 1.00000
  O13 O 0.17025 0.50000 0.36519 1.00000
  O14 O 0.07552 0.50000 0.70137 1.00000
  O15 O 0.30311 0.31621 0.20892 1.00000
  O16 O 0.10730 0.26583 0.03459 1.00000
  O17 O 0.67600 0.00000 0.63065 1.00000
  O18 O 0.92448 0.50000 0.20137 1.00000
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