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Tb4HfSn3O14

Alexandria ALEX

Alex-ID: agm021024684 · Space group: R-3m (#166)

Basic Information

Formula
Tb4HfSn3O14
Alex-ID
agm021024684
Elements
4
Sites
22
Space group
R-3m (#166)
Crystal system
trigonal
Volume
291.65
ų
Cell a
7.4584
Å
Cell b
7.4584
Å
Cell c
7.4584
Å
α angle
59.74
°
β angle
59.74
°
γ angle
59.74
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb4HfSn3O14
Tb
4.00 · 18.2%
Hf
1.00 · 4.5%
Sn
3.00 · 13.6%
O
14.00 · 63.6%

Energy & Stability

Energy above hull
0.0087
eV/atom
Formation energy
-3.2743
eV/atom
Corrected total energy
-181.9401
eV
Raw total energy
-172.1081
eV

Electronic Structure

Indirect band gap
3.1232
eV
Direct band gap
3.1232
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3C4D14_27_spg166

Decomposition

Tb2Sn2O7 Tb4Hf3O12 HfO2

Computed at

2024-11-17 11:27:08.927432

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm021024684).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm021024684
data_agm021024684
_cell_length_a     7.45845
_cell_length_b     7.45845
_cell_length_c     7.45845
_cell_angle_alpha  59.74030
_cell_angle_beta   59.74030
_cell_angle_gamma  59.74030
_cell_volume       291.64935
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.50000 0.50000 0.50000 1.00000
  Tb2 Tb 0.50000 0.50000 0.00000 1.00000
  Tb3 Tb 0.00000 0.50000 0.50000 1.00000
  Tb4 Tb 0.50000 0.00000 0.50000 1.00000
  Hf1 Hf 0.00000 0.00000 0.00000 1.00000
  Sn1 Sn 0.00000 0.00000 0.50000 1.00000
  Sn2 Sn 0.50000 0.00000 0.00000 1.00000
  Sn3 Sn 0.00000 0.50000 0.00000 1.00000
  O1 O 0.08746 0.66186 0.08746 1.00000
  O2 O 0.66186 0.08746 0.08746 1.00000
  O3 O 0.08746 0.08746 0.66186 1.00000
  O4 O 0.66132 0.08976 0.66132 1.00000
  O5 O 0.08976 0.66132 0.66132 1.00000
  O6 O 0.66132 0.66132 0.08976 1.00000
  O7 O 0.91254 0.33814 0.91254 1.00000
  O8 O 0.33814 0.91254 0.91254 1.00000
  O9 O 0.91254 0.91254 0.33814 1.00000
  O10 O 0.33868 0.91024 0.33868 1.00000
  O11 O 0.91024 0.33868 0.33868 1.00000
  O12 O 0.33868 0.33868 0.91024 1.00000
  O13 O 0.37507 0.37507 0.37507 1.00000
  O14 O 0.62493 0.62493 0.62493 1.00000
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