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RbZn4Ga5Se12

Alexandria ALEX

Alex-ID: agm021125571 · Space group: P1 (#1)

Basic Information

Formula
RbZn4Ga5Se12
Alex-ID
agm021125571
Elements
4
Sites
22
Space group
P1 (#1)
Crystal system
triclinic
Volume
570.96
ų
Cell a
8.8045
Å
Cell b
8.8383
Å
Cell c
8.9434
Å
α angle
107.87
°
β angle
107.14
°
γ angle
107.58
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
RbZn4Ga5Se12
Rb
1.00 · 4.5%
Zn
4.00 · 18.2%
Ga
5.00 · 22.7%
Se
12.00 · 54.5%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.7280
eV/atom
Corrected total energy
-79.1187
eV
Raw total energy
-79.1187
eV

Electronic Structure

Indirect band gap
1.4938
eV
Direct band gap
1.4938
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB4C5D12_27_spg1

Decomposition

RbZn4Ga5Se12

Computed at

2025-01-19 14:10:13

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm021125571).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm021125571
data_agm021125571
_cell_length_a     8.80450
_cell_length_b     8.83831
_cell_length_c     8.94342
_cell_angle_alpha  107.87286
_cell_angle_beta   107.14326
_cell_angle_gamma  107.57905
_cell_volume       570.95971
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Rb1 Rb 0.99506 0.00007 0.99663 1.00000
  Zn1 Zn 0.48945 0.34247 0.93631 1.00000
  Zn2 Zn 0.62388 0.70433 0.39810 1.00000
  Zn3 Zn 0.40720 0.63378 0.71491 1.00000
  Zn4 Zn 0.70948 0.40571 0.63372 1.00000
  Ga1 Ga 0.18762 0.55808 0.02231 1.00000
  Ga2 Ga 0.02178 0.18256 0.56064 1.00000
  Ga3 Ga 0.56312 0.02237 0.18576 1.00000
  Ga4 Ga 0.93495 0.47923 0.33595 1.00000
  Ga5 Ga 0.33358 0.93712 0.48408 1.00000
  Se1 Se 0.85645 0.63175 0.55117 1.00000
  Se2 Se 0.55290 0.86011 0.63078 1.00000
  Se3 Se 0.64044 0.56457 0.86010 1.00000
  Se4 Se 0.37315 0.43954 0.15026 1.00000
  Se5 Se 0.15546 0.37810 0.44776 1.00000
  Se6 Se 0.44274 0.15240 0.37647 1.00000
  Se7 Se 0.06821 0.69145 0.22487 1.00000
  Se8 Se 0.22535 0.07084 0.69130 1.00000
  Se9 Se 0.69789 0.22275 0.07233 1.00000
  Se10 Se 0.77993 0.92148 0.30117 1.00000
  Se11 Se 0.29954 0.78246 0.92699 1.00000
  Se12 Se 0.92302 0.30005 0.77960 1.00000
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