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Dy4Er(SiOs)10

Alexandria ALEX

Alex-ID: agm021200560 · 空间群: I4/mmm (#139)

基础信息

化学式
Dy4Er(SiOs)10
Alex-ID
agm021200560
元素数
4
位点数
25
空间群
I4/mmm (#139)
晶系
tetragonal
体积
419.04
ų
晶胞参数 a
24.3788
Å
晶胞参数 b
24.3788
Å
晶胞参数 c
24.3788
Å
α 角
170.21
°
β 角
170.21
°
γ 角
13.86
°

组成

元素组成(原子分数)
组成信息
化学式
Dy4Er(SiOs)10
Dy
4.00 · 16.0%
Er
1.00 · 4.0%
Si
10.00 · 40.0%
Os
10.00 · 40.0%

能量与稳定性

凸包上方能量
0.0010
eV/atom
形成能
-0.7243
eV/atom
校正后总能量
-207.6131
eV
原始总能量
-207.6131
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
16.2900
总磁矩
0.0000
μB

其他信息

原型 ID

AB4C10D10_0_spg139

分解产物

Dy(SiOs)2 Er(SiOs)2

计算时间

2025-01-20 03:02:11

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm021200560).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm021200560
data_agm021200560
_cell_length_a     24.37882
_cell_length_b     24.37882
_cell_length_c     24.37882
_cell_angle_alpha  170.20845
_cell_angle_beta   170.20845
_cell_angle_gamma  13.86429
_cell_volume       419.03627
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Dy1 Dy 0.59981 0.59981 0.00000 1.00000
  Dy2 Dy 0.19993 0.19993 0.00000 1.00000
  Dy3 Dy 0.80007 0.80007 0.00000 1.00000
  Dy4 Dy 0.40019 0.40019 0.00000 1.00000
  Er1 Er 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.52520 0.52520 0.00000 1.00000
  Si2 Si 0.12522 0.12522 0.00000 1.00000
  Si3 Si 0.72539 0.72539 0.00000 1.00000
  Si4 Si 0.32558 0.32558 0.00000 1.00000
  Si5 Si 0.92570 0.92570 0.00000 1.00000
  Si6 Si 0.07430 0.07430 0.00000 1.00000
  Si7 Si 0.67442 0.67442 0.00000 1.00000
  Si8 Si 0.27461 0.27461 0.00000 1.00000
  Si9 Si 0.87478 0.87478 0.00000 1.00000
  Si10 Si 0.47480 0.47480 0.00000 1.00000
  Os1 Os 0.54968 0.04968 0.50000 1.00000
  Os2 Os 0.14982 0.64982 0.50000 1.00000
  Os3 Os 0.75000 0.25000 0.50000 1.00000
  Os4 Os 0.35018 0.85018 0.50000 1.00000
  Os5 Os 0.95032 0.45032 0.50000 1.00000
  Os6 Os 0.04968 0.54968 0.50000 1.00000
  Os7 Os 0.64982 0.14982 0.50000 1.00000
  Os8 Os 0.25000 0.75000 0.50000 1.00000
  Os9 Os 0.85018 0.35018 0.50000 1.00000
  Os10 Os 0.45032 0.95032 0.50000 1.00000
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