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Cs2CdSiSe4

Alexandria ALEX

Alex-ID: agm024275903 · Space group: Fddd (#70)

Alexandria Database API

Basic Information

Formula
Cs2CdSiSe4
Alex-ID
agm024275903
Elements
4
Sites
16
Space group
Fddd (#70)
Crystal system
orthorhombic
Volume
607.07
ų
Cell a
14.5802
Å
Cell b
13.0358
Å
Cell c
8.0192
Å
α angle
84.05
°
β angle
62.78
°
γ angle
33.16
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Cs2CdSiSe4
Cs
4.00 · 25.0%
Cd
2.00 · 12.5%
Si
2.00 · 12.5%
Se
8.00 · 50.0%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.9309
eV/atom
Corrected total energy
-58.9365
eV
Raw total energy
-58.9365
eV

Electronic Structure

Indirect band gap
2.3837
eV
Direct band gap
2.3837
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

ABC2D4_114_spg70

Decomposition

Cs2CdSiSe4

Computed at

2024-10-02 06:26:03.190368

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm024275903).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm024275903
data_agm024275903
_cell_length_a     14.58017
_cell_length_b     13.03576
_cell_length_c     8.01916
_cell_angle_alpha  84.05444
_cell_angle_beta   62.78100
_cell_angle_gamma  33.16456
_cell_volume       607.06731
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Cs1 Cs 0.18080 0.18080 0.81920 1.00000
  Cs2 Cs 0.81920 0.81920 0.18080 1.00000
  Cs3 Cs 0.06920 0.06920 0.43080 1.00000
  Cs4 Cs 0.43080 0.43080 0.06920 1.00000
  Cd1 Cd 0.75000 0.75000 0.75000 1.00000
  Cd2 Cd 0.50000 0.50000 0.50000 1.00000
  Si1 Si 0.25000 0.25000 0.25000 1.00000
  Si2 Si 0.00000 0.00000 0.00000 1.00000
  Se1 Se 0.83147 0.06379 0.34974 1.00000
  Se2 Se 0.75499 0.34974 0.06379 1.00000
  Se3 Se 0.34974 0.75499 0.83147 1.00000
  Se4 Se 0.06379 0.83147 0.75499 1.00000
  Se5 Se 0.41853 0.18621 0.90026 1.00000
  Se6 Se 0.49501 0.90026 0.18621 1.00000
  Se7 Se 0.90026 0.49501 0.41853 1.00000
  Se8 Se 0.18621 0.41853 0.49501 1.00000
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