Tb4SiPS2

Alexandria ALEX

Alex-ID: agm030341365 · 空间群: I4/mmm (#139)

Alexandria Database API

基础信息

化学式

Tb4SiPS2

Alex-ID

agm030341365

元素数

位点数

空间群

I4/mmm (#139)

晶系

tetragonal

体积

182.25

Å³

晶胞参数 a

6.9384

晶胞参数 b

6.9384

晶胞参数 c

6.9384

α 角

131.73

β 角

131.73

γ 角

70.66

组成

元素组成（原子分数）

组成信息

化学式

Tb4SiPS2

4.00 · 50.0%

1.00 · 12.5%

2.00 · 25.0%

能量与稳定性

凸包上方能量

0.0141

eV/atom

形成能

-1.8175

eV/atom

校正后总能量

-52.1574

原始总能量

-50.8305

电子结构

间接带隙

0.0000

直接带隙

0.0000

费米能级态密度

2.0778

总磁矩

0.0000

μB

其他信息

原型 ID

ABC2D4_37_spg42

分解产物

Tb2PS Tb4SiS3 TbSi

计算时间

2025-07-01 11:32:26

引用参考

Alexandria 官方页面

https://alexandria.icams.rub.de/

参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm030341365).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX

@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

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样式: Ball & Stick | 拖拽旋转 · 滚轮缩放 · 右键平移

原始 CIF 数据

# CIF generated by HEAS from Alexandria entry agm030341365
data_agm030341365
_cell_length_a     6.93835
_cell_length_b     6.93835
_cell_length_c     6.93835
_cell_angle_alpha  131.72788
_cell_angle_beta   131.72788
_cell_angle_gamma  70.65915
_cell_volume       182.25430
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.00000 0.50000 0.50000 1.00000
  Tb2 Tb 0.50000 0.00000 0.50000 1.00000
  Tb3 Tb 0.75256 0.75256 0.00000 1.00000
  Tb4 Tb 0.24744 0.24744 0.00000 1.00000
  Si1 Si 0.50000 0.50000 0.00000 1.00000
  P1 P 0.00000 0.00000 0.00000 1.00000
  S1 S 0.25000 0.75000 0.50000 1.00000
  S2 S 0.75000 0.25000 0.50000 1.00000

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