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MgV2SiN4

Alexandria ALEX

Alex-ID: agm032899019 · Space group: P2/m (#10)

Basic Information

Formula
MgV2SiN4
Alex-ID
agm032899019
Elements
4
Sites
8
Space group
P2/m (#10)
Crystal system
monoclinic
Volume
69.68
ų
Cell a
2.8334
Å
Cell b
4.9660
Å
Cell c
5.1987
Å
α angle
72.29
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
MgV2SiN4
Mg
1.00 · 12.5%
V
2.00 · 25.0%
Si
1.00 · 12.5%
N
4.00 · 50.0%

Energy & Stability

Energy above hull
0.3770
eV/atom
Formation energy
-0.9840
eV/atom
Corrected total energy
-64.9368
eV
Raw total energy
-64.9368
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0727
eV
DOS at Fermi level
3.3590
Total magnetisation
0.3696
μB

Additional Information

Prototype ID

ABC2D4_47_spg10

Decomposition

VN MgSiN2

Computed at

2024-08-13 17:44:10.125081

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm032899019).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm032899019
data_agm032899019
_cell_length_a     2.83337
_cell_length_b     4.96599
_cell_length_c     5.19866
_cell_angle_alpha  72.28535
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       69.67928
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Mg1 Mg 0.50000 0.00000 0.50000 1.00000
  V1 V 0.50000 0.50000 0.00000 1.00000
  V2 V 0.00000 0.00000 0.00000 1.00000
  Si1 Si 0.00000 0.50000 0.50000 1.00000
  N1 N 0.50000 0.72089 0.27575 1.00000
  N2 N 0.50000 0.27911 0.72425 1.00000
  N3 N 0.00000 0.72807 0.74533 1.00000
  N4 N 0.00000 0.27193 0.25467 1.00000
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