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Tm3SiSe2

Alexandria ALEX

Alex-ID: agm034204273 · Space group: Fddd (#70)

Basic Information

Formula
Tm3SiSe2
Alex-ID
agm034204273
Elements
3
Sites
24
Space group
Fddd (#70)
Crystal system
orthorhombic
Volume
565.02
ų
Cell a
13.4456
Å
Cell b
12.8217
Å
Cell c
7.0183
Å
α angle
79.48
°
β angle
69.65
°
γ angle
30.88
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tm3SiSe2
Tm
12.00 · 50.0%
Si
4.00 · 16.7%
Se
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0030
eV/atom
Formation energy
-1.4709
eV/atom
Corrected total energy
-138.5768
eV
Raw total energy
-138.5768
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0045
eV
DOS at Fermi level
4.6505
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_36_spg70

Decomposition

Tm3SiSe2

Computed at

2024-11-09 00:34:46.041873

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm034204273).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm034204273
data_agm034204273
_cell_length_a     13.44555
_cell_length_b     12.82168
_cell_length_c     7.01832
_cell_angle_alpha  79.47671
_cell_angle_beta   69.64600
_cell_angle_gamma  30.87729
_cell_volume       565.02465
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.16361 0.66421 0.32215 1.00000
  Tm2 Tm 0.66421 0.16361 0.85003 1.00000
  Tm3 Tm 0.08639 0.58579 0.92785 1.00000
  Tm4 Tm 0.58579 0.08639 0.39997 1.00000
  Tm5 Tm 0.01497 0.48503 0.48503 1.00000
  Tm6 Tm 0.48503 0.01497 0.01497 1.00000
  Tm7 Tm 0.39997 0.92785 0.58579 1.00000
  Tm8 Tm 0.92785 0.39997 0.08639 1.00000
  Tm9 Tm 0.85003 0.32215 0.66421 1.00000
  Tm10 Tm 0.32215 0.85003 0.16361 1.00000
  Tm11 Tm 0.23503 0.76497 0.76497 1.00000
  Tm12 Tm 0.76497 0.23503 0.23503 1.00000
  Si1 Si 0.91651 0.91651 0.08349 1.00000
  Si2 Si 0.33349 0.33349 0.16651 1.00000
  Si3 Si 0.16651 0.16651 0.33349 1.00000
  Si4 Si 0.08349 0.08349 0.91651 1.00000
  Se1 Se 0.99819 0.99819 0.50181 1.00000
  Se2 Se 0.41837 0.41837 0.58163 1.00000
  Se3 Se 0.83163 0.83163 0.66837 1.00000
  Se4 Se 0.25181 0.25181 0.74819 1.00000
  Se5 Se 0.74819 0.74819 0.25181 1.00000
  Se6 Se 0.66837 0.66837 0.83163 1.00000
  Se7 Se 0.58163 0.58163 0.41837 1.00000
  Se8 Se 0.50181 0.50181 0.99819 1.00000
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