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Tm3SnSe2

Alexandria ALEX

Alex-ID: agm034456105 · Space group: Fddd (#70)

Basic Information

Formula
Tm3SnSe2
Alex-ID
agm034456105
Elements
3
Sites
24
Space group
Fddd (#70)
Crystal system
orthorhombic
Volume
605.60
ų
Cell a
13.7794
Å
Cell b
13.1389
Å
Cell c
7.1789
Å
α angle
79.53
°
β angle
69.66
°
γ angle
30.82
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tm3SnSe2
Tm
12.00 · 50.0%
Sn
4.00 · 16.7%
Se
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0549
eV/atom
Formation energy
-1.3504
eV/atom
Corrected total energy
-130.0040
eV
Raw total energy
-130.0040
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0067
eV
DOS at Fermi level
5.6191
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_36_spg70

Decomposition

Tm3Se4 Tm5Sn3Se Tm5Se6

Computed at

2025-04-15 09:30:37

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm034456105).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm034456105
data_agm034456105
_cell_length_a     13.77937
_cell_length_b     13.13892
_cell_length_c     7.17889
_cell_angle_alpha  79.52511
_cell_angle_beta   69.65734
_cell_angle_gamma  30.81755
_cell_volume       605.60097
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tm1 Tm 0.66943 0.16519 0.82800 1.00000
  Tm2 Tm 0.16519 0.66943 0.33738 1.00000
  Tm3 Tm 0.58057 0.08481 0.42200 1.00000
  Tm4 Tm 0.08481 0.58057 0.91262 1.00000
  Tm5 Tm 0.50186 0.99814 0.99814 1.00000
  Tm6 Tm 0.99814 0.50186 0.50186 1.00000
  Tm7 Tm 0.91262 0.42200 0.08481 1.00000
  Tm8 Tm 0.42200 0.91262 0.58057 1.00000
  Tm9 Tm 0.33738 0.82800 0.16519 1.00000
  Tm10 Tm 0.82800 0.33738 0.66943 1.00000
  Tm11 Tm 0.74814 0.25186 0.25186 1.00000
  Tm12 Tm 0.25186 0.74814 0.74814 1.00000
  Sn1 Sn 0.91615 0.91615 0.08385 1.00000
  Sn2 Sn 0.33385 0.33385 0.16615 1.00000
  Sn3 Sn 0.16615 0.16615 0.33385 1.00000
  Sn4 Sn 0.08385 0.08385 0.91615 1.00000
  Se1 Se 0.00013 0.00013 0.49987 1.00000
  Se2 Se 0.41697 0.41697 0.58303 1.00000
  Se3 Se 0.83303 0.83303 0.66697 1.00000
  Se4 Se 0.24987 0.24987 0.75013 1.00000
  Se5 Se 0.75013 0.75013 0.24987 1.00000
  Se6 Se 0.66697 0.66697 0.83303 1.00000
  Se7 Se 0.58303 0.58303 0.41697 1.00000
  Se8 Se 0.49987 0.49987 0.00013 1.00000
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