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Ho3SnS2

Alexandria ALEX

Alex-ID: agm034683172 · Space group: Fddd (#70)

Basic Information

Formula
Ho3SnS2
Alex-ID
agm034683172
Elements
3
Sites
24
Space group
Fddd (#70)
Crystal system
orthorhombic
Volume
571.30
ų
Cell a
13.4828
Å
Cell b
12.8544
Å
Cell c
7.0493
Å
α angle
79.46
°
β angle
69.60
°
γ angle
30.93
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ho3SnS2
Ho
12.00 · 50.0%
Sn
4.00 · 16.7%
S
8.00 · 33.3%

Energy & Stability

Energy above hull
0.0925
eV/atom
Formation energy
-1.7155
eV/atom
Corrected total energy
-145.1444
eV
Raw total energy
-139.8367
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0128
eV
DOS at Fermi level
6.3182
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C3_2914_spg15

Decomposition

Ho5S6 Ho5Sn3S HoSn2

Computed at

2025-04-14 09:01:52

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm034683172).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm034683172
data_agm034683172
_cell_length_a     13.48281
_cell_length_b     12.85437
_cell_length_c     7.04932
_cell_angle_alpha  79.46301
_cell_angle_beta   69.60497
_cell_angle_gamma  30.93202
_cell_volume       571.29793
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ho1 Ho 0.67261 0.16571 0.81441 1.00000
  Ho2 Ho 0.16571 0.67261 0.34727 1.00000
  Ho3 Ho 0.57739 0.08429 0.43559 1.00000
  Ho4 Ho 0.08429 0.57739 0.90273 1.00000
  Ho5 Ho 0.51176 0.98824 0.98824 1.00000
  Ho6 Ho 0.98824 0.51176 0.51176 1.00000
  Ho7 Ho 0.90273 0.43559 0.08429 1.00000
  Ho8 Ho 0.43559 0.90273 0.57739 1.00000
  Ho9 Ho 0.34727 0.81441 0.16571 1.00000
  Ho10 Ho 0.81441 0.34727 0.67261 1.00000
  Ho11 Ho 0.73824 0.26176 0.26176 1.00000
  Ho12 Ho 0.26176 0.73824 0.73824 1.00000
  Sn1 Sn 0.91595 0.91595 0.08405 1.00000
  Sn2 Sn 0.33405 0.33405 0.16595 1.00000
  Sn3 Sn 0.16595 0.16595 0.33405 1.00000
  Sn4 Sn 0.08405 0.08405 0.91595 1.00000
  S1 S 0.00109 0.00109 0.49891 1.00000
  S2 S 0.41613 0.41613 0.58387 1.00000
  S3 S 0.83387 0.83387 0.66613 1.00000
  S4 S 0.24891 0.24891 0.75109 1.00000
  S5 S 0.75109 0.75109 0.24891 1.00000
  S6 S 0.66613 0.66613 0.83387 1.00000
  S7 S 0.58387 0.58387 0.41613 1.00000
  S8 S 0.49891 0.49891 0.00109 1.00000
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