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Tb3Ga3Ni2Rh

Alexandria ALEX

Alex-ID: agm034772906 · 空间群: Pm (#6)

基础信息

化学式
Tb3Ga3Ni2Rh
Alex-ID
agm034772906
元素数
4
位点数
36
空间群
Pm (#6)
晶系
monoclinic
体积
666.22
ų
晶胞参数 a
6.7780
Å
晶胞参数 b
4.3049
Å
晶胞参数 c
22.8323
Å
α 角
90.00
°
β 角
90.14
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Tb3Ga3Ni2Rh
Tb
12.00 · 33.3%
Ga
12.00 · 33.3%
Ni
8.00 · 22.2%
Rh
4.00 · 11.1%

能量与稳定性

凸包上方能量
0.0014
eV/atom
形成能
-0.7232
eV/atom
校正后总能量
-193.6531
eV
原始总能量
-193.6531
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0017
eV
费米能级态密度
15.7382
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C3D3_12_spg6

分解产物

Tb2Ga2NiRh TbGaNi

计算时间

2024-12-05 14:46:54

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm034772906).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm034772906
data_agm034772906
_cell_length_a     6.77799
_cell_length_b     4.30494
_cell_length_c     22.83229
_cell_angle_alpha  90.00000
_cell_angle_beta   90.14085
_cell_angle_gamma  90.00000
_cell_volume       666.21755
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.52742 0.00000 0.93871 1.00000
  Tb2 Tb 0.52550 0.00000 0.60312 1.00000
  Tb3 Tb 0.52602 0.00000 0.27063 1.00000
  Tb4 Tb 0.02823 0.00000 0.89699 1.00000
  Tb5 Tb 0.02871 0.00000 0.56047 1.00000
  Tb6 Tb 0.03050 0.00000 0.22906 1.00000
  Tb7 Tb 0.47117 0.50000 0.72917 1.00000
  Tb8 Tb 0.47210 0.50000 0.39631 1.00000
  Tb9 Tb 0.47533 0.50000 0.06487 1.00000
  Tb10 Tb 0.97165 0.50000 0.77028 1.00000
  Tb11 Tb 0.97262 0.50000 0.43666 1.00000
  Tb12 Tb 0.97642 0.50000 0.10456 1.00000
  Ga1 Ga 0.65691 0.00000 0.81331 1.00000
  Ga2 Ga 0.65546 0.00000 0.47899 1.00000
  Ga3 Ga 0.65990 0.00000 0.14697 1.00000
  Ga4 Ga 0.15588 0.00000 0.68598 1.00000
  Ga5 Ga 0.16076 0.00000 0.35552 1.00000
  Ga6 Ga 0.16406 0.00000 0.02376 1.00000
  Ga7 Ga 0.34541 0.50000 0.85946 1.00000
  Ga8 Ga 0.34083 0.50000 0.52156 1.00000
  Ga9 Ga 0.34135 0.50000 0.19010 1.00000
  Ga10 Ga 0.84633 0.50000 0.97554 1.00000
  Ga11 Ga 0.84720 0.50000 0.64010 1.00000
  Ga12 Ga 0.84612 0.50000 0.30748 1.00000
  Ni1 Ni 0.27877 0.00000 0.46276 1.00000
  Ni2 Ni 0.28259 0.00000 0.13156 1.00000
  Ni3 Ni 0.22335 0.50000 0.96516 1.00000
  Ni4 Ni 0.22367 0.50000 0.62704 1.00000
  Ni5 Ni 0.22298 0.50000 0.29639 1.00000
  Ni6 Ni 0.72282 0.50000 0.87118 1.00000
  Ni7 Ni 0.71990 0.50000 0.53582 1.00000
  Ni8 Ni 0.72178 0.50000 0.20342 1.00000
  Rh1 Rh 0.76812 0.00000 0.70290 1.00000
  Rh2 Rh 0.76936 0.00000 0.36979 1.00000
  Rh3 Rh 0.77223 0.00000 0.03765 1.00000
  Rh4 Rh 0.26851 0.00000 0.79675 1.00000
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