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Tb2Si4TcNi3

Alexandria ALEX

Alex-ID: agm035209802 · Space group: P-4m2 (#115)

Basic Information

Formula
Tb2Si4TcNi3
Alex-ID
agm035209802
Elements
4
Sites
10
Space group
P-4m2 (#115)
Crystal system
tetragonal
Volume
155.42
ų
Cell a
4.0020
Å
Cell b
4.0020
Å
Cell c
9.7037
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb2Si4TcNi3
Tb
2.00 · 20.0%
Si
4.00 · 40.0%
Tc
1.00 · 10.0%
Ni
3.00 · 30.0%

Energy & Stability

Energy above hull
0.0065
eV/atom
Formation energy
-0.8019
eV/atom
Corrected total energy
-66.6930
eV
Raw total energy
-66.6930
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
5.9579
Total magnetisation
0.0001
μB

Additional Information

Prototype ID

AB2C3D4_7_spg115

Decomposition

Tb2Si4Tc3 Tb(SiTc2)2 Tb(SiNi)2

Computed at

2025-03-13 00:35:03

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm035209802).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm035209802
data_agm035209802
_cell_length_a     4.00203
_cell_length_b     4.00203
_cell_length_c     9.70369
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       155.41652
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.00000 0.50000 0.74016 1.00000
  Tb2 Tb 0.50000 0.00000 0.25984 1.00000
  Si1 Si 0.00000 0.00000 0.50000 1.00000
  Si2 Si 0.50000 0.50000 0.50000 1.00000
  Si3 Si 0.00000 0.50000 0.13576 1.00000
  Si4 Si 0.50000 0.00000 0.86424 1.00000
  Tc1 Tc 0.00000 0.00000 0.00000 1.00000
  Ni1 Ni 0.50000 0.50000 0.00000 1.00000
  Ni2 Ni 0.00000 0.50000 0.37717 1.00000
  Ni3 Ni 0.50000 0.00000 0.62283 1.00000
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