导航

HEAS Data Platform · 材料科学计算数据库

Th3SiAs2

Alexandria ALEX

Alex-ID: agm036200089 · 空间群: C2/m (#12)

Alexandria Database API

基础信息

化学式
Th3SiAs2
Alex-ID
agm036200089
元素数
3
位点数
12
空间群
C2/m (#12)
晶系
monoclinic
体积
328.34
ų
晶胞参数 a
7.3738
Å
晶胞参数 b
7.3738
Å
晶胞参数 c
7.3883
Å
α 角
80.42
°
β 角
99.58
°
γ 角
60.07
°

组成

元素组成（原子分数）
组成信息
化学式
Th3SiAs2
Th
6.00 · 50.0%
Si
2.00 · 16.7%
As
4.00 · 33.3%

能量与稳定性

凸包上方能量
0.0102
eV/atom
形成能
-1.1611
eV/atom
校正后总能量
-87.9119
eV
原始总能量
-87.9119
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0003
eV
费米能级态密度
7.0855
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C3_4589_spg1

分解产物

Th4SiAs3 ThSi

计算时间

2025-02-28 19:47:50

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm036200089).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm036200089
data_agm036200089
_cell_length_a     7.37377
_cell_length_b     7.37377
_cell_length_c     7.38832
_cell_angle_alpha  80.41780
_cell_angle_beta   99.58220
_cell_angle_gamma  60.07381
_cell_volume       328.34308
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.74402 0.25598 0.24482 1.00000
  Th2 Th 0.25598 0.74402 0.75518 1.00000
  Th3 Th 0.08182 0.58104 0.24460 1.00000
  Th4 Th 0.41896 0.91818 0.24460 1.00000
  Th5 Th 0.58104 0.08182 0.75540 1.00000
  Th6 Th 0.91818 0.41896 0.75540 1.00000
  Si1 Si 0.66696 0.66696 0.00000 1.00000
  Si2 Si 0.33304 0.33304 0.00000 1.00000
  As1 As 0.50000 0.50000 0.50000 1.00000
  As2 As 0.00000 0.00000 0.00000 1.00000
  As3 As 0.83449 0.83449 0.50000 1.00000
  As4 As 0.16551 0.16551 0.50000 1.00000
获取直接链接