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Ta3Nb2SiN6

Alexandria ALEX

Alex-ID: agm040449564 · 空间群: C2/m (#12)

基础信息

化学式
Ta3Nb2SiN6
Alex-ID
agm040449564
元素数
4
位点数
12
空间群
C2/m (#12)
晶系
monoclinic
体积
125.07
ų
晶胞参数 a
5.3510
Å
晶胞参数 b
5.3510
Å
晶胞参数 c
5.2539
Å
α 角
80.70
°
β 角
80.70
°
γ 角
118.75
°

组成

元素组成(原子分数)
组成信息
化学式
Ta3Nb2SiN6
Ta
3.00 · 25.0%
Nb
2.00 · 16.7%
Si
1.00 · 8.3%
N
6.00 · 50.0%

能量与稳定性

凸包上方能量
0.3292
eV/atom
形成能
-0.9850
eV/atom
校正后总能量
-120.6558
eV
原始总能量
-120.6558
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0000
eV
费米能级态密度
3.9812
总磁矩
0.0000
μB

其他信息

原型 ID

AB2C3D6_1_spg12

分解产物

Nb5Si3N TaN NbN Si3N4

计算时间

2024-08-14 21:25:37.187242

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm040449564).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm040449564
data_agm040449564
_cell_length_a     5.35096
_cell_length_b     5.35096
_cell_length_c     5.25389
_cell_angle_alpha  80.69545
_cell_angle_beta   80.69545
_cell_angle_gamma  118.75329
_cell_volume       125.06541
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ta1 Ta 0.81738 0.18262 0.50000 1.00000
  Ta2 Ta 0.18262 0.81738 0.50000 1.00000
  Ta3 Ta 0.50000 0.50000 0.50000 1.00000
  Nb1 Nb 0.66397 0.33603 0.00000 1.00000
  Nb2 Nb 0.33603 0.66397 0.00000 1.00000
  Si1 Si 0.00000 0.00000 0.00000 1.00000
  N1 N 0.64576 0.93101 0.21873 1.00000
  N2 N 0.79087 0.79087 0.75076 1.00000
  N3 N 0.35424 0.06899 0.78127 1.00000
  N4 N 0.93101 0.64576 0.21873 1.00000
  N5 N 0.20913 0.20913 0.24924 1.00000
  N6 N 0.06899 0.35424 0.78127 1.00000
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