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Np2Si5Ni2Os

Alexandria ALEX

Alex-ID: agm043746059 · Space group: Ibam (#72)

Basic Information

Formula
Np2Si5Ni2Os
Alex-ID
agm043746059
Elements
4
Sites
20
Space group
Ibam (#72)
Crystal system
orthorhombic
Volume
310.32
ų
Cell a
7.9308
Å
Cell b
7.9308
Å
Cell c
7.9308
Å
α angle
137.53
°
β angle
105.26
°
γ angle
89.96
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Np2Si5Ni2Os
Np
4.00 · 20.0%
Si
10.00 · 50.0%
Ni
4.00 · 20.0%
Os
2.00 · 10.0%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.5049
eV/atom
Corrected total energy
-161.6868
eV
Raw total energy
-161.6869
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0005
eV
DOS at Fermi level
37.5126
Total magnetisation
14.7086
μB

Additional Information

Prototype ID

AB2C2D5_56_spg15

Decomposition

Np2Si5Ni2Os

Computed at

2024-09-25 04:49:55.956839

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm043746059).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm043746059
data_agm043746059
_cell_length_a     7.93080
_cell_length_b     7.93080
_cell_length_c     7.93080
_cell_angle_alpha  137.52577
_cell_angle_beta   105.25662
_cell_angle_gamma  89.95853
_cell_volume       310.32240
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Np1 Np 0.39612 0.63176 0.76436 1.00000
  Np2 Np 0.86740 0.13176 0.73564 1.00000
  Np3 Np 0.60388 0.36824 0.23564 1.00000
  Np4 Np 0.13260 0.86824 0.26436 1.00000
  Si1 Si 0.73051 0.89171 0.83879 1.00000
  Si2 Si 0.05292 0.39171 0.66121 1.00000
  Si3 Si 0.26949 0.10829 0.16121 1.00000
  Si4 Si 0.94708 0.60829 0.33879 1.00000
  Si5 Si 0.50000 0.75000 0.25000 1.00000
  Si6 Si 0.50000 0.25000 0.75000 1.00000
  Si7 Si 0.23134 0.48134 0.25000 1.00000
  Si8 Si 0.76866 0.51866 0.75000 1.00000
  Si9 Si 0.76866 0.01866 0.25000 1.00000
  Si10 Si 0.23134 0.98134 0.75000 1.00000
  Ni1 Ni 0.47002 0.86340 0.60661 1.00000
  Ni2 Ni 0.25679 0.36340 0.89339 1.00000
  Ni3 Ni 0.52998 0.13660 0.39339 1.00000
  Ni4 Ni 0.74321 0.63660 0.10661 1.00000
  Os1 Os 0.00000 0.25000 0.25000 1.00000
  Os2 Os 0.00000 0.75000 0.75000 1.00000
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