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Ga2SiF6

Alexandria ALEX

Alex-ID: agm044376690 · Space group: P-3m1 (#164)

Basic Information

Formula
Ga2SiF6
Alex-ID
agm044376690
Elements
3
Sites
9
Space group
P-3m1 (#164)
Crystal system
trigonal
Volume
132.19
ų
Cell a
5.5782
Å
Cell b
5.5782
Å
Cell c
4.9056
Å
α angle
90.00
°
β angle
90.00
°
γ angle
120.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Ga2SiF6
Ga
2.00 · 22.2%
Si
1.00 · 11.1%
F
6.00 · 66.7%

Energy & Stability

Energy above hull
0.0537
eV/atom
Formation energy
-2.7600
eV/atom
Corrected total energy
-44.8450
eV
Raw total energy
-44.8450
eV

Electronic Structure

Indirect band gap
4.7889
eV
Direct band gap
4.8291
eV
DOS at Fermi level
0.0000
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB2C6_3793_spg8

Decomposition

SiF4 Ga GaF3

Computed at

2025-03-04 13:56:37

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm044376690).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm044376690
data_agm044376690
_cell_length_a     5.57818
_cell_length_b     5.57818
_cell_length_c     4.90561
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  120.00000
_cell_volume       132.19326
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.66667 0.33333 0.27639 1.00000
  Ga2 Ga 0.33333 0.66667 0.72361 1.00000
  Si1 Si 0.00000 0.00000 0.00000 1.00000
  F1 F 0.85335 0.14665 0.80055 1.00000
  F2 F 0.85335 0.70669 0.80055 1.00000
  F3 F 0.29331 0.14665 0.80055 1.00000
  F4 F 0.14665 0.85335 0.19945 1.00000
  F5 F 0.14665 0.29331 0.19945 1.00000
  F6 F 0.70669 0.85335 0.19945 1.00000
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