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Tb(TmGa4)3

Alexandria ALEX

Alex-ID: agm044486324 · Space group: P4/mmm (#123)

Basic Information

Formula
Tb(TmGa4)3
Alex-ID
agm044486324
Elements
3
Sites
16
Space group
P4/mmm (#123)
Crystal system
tetragonal
Volume
307.83
ų
Cell a
4.2492
Å
Cell b
4.2492
Å
Cell c
17.0489
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb(TmGa4)3
Tb
1.00 · 6.3%
Tm
3.00 · 18.8%
Ga
12.00 · 75.0%

Energy & Stability

Energy above hull
0.0069
eV/atom
Formation energy
-0.5153
eV/atom
Corrected total energy
-62.6428
eV
Raw total energy
-62.6428
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0000
eV
DOS at Fermi level
8.5340
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB3C12_5_spg123

Decomposition

TbGa3 TmGa3

Computed at

2024-12-10 19:26:24

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm044486324).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm044486324
data_agm044486324
_cell_length_a     4.24922
_cell_length_b     4.24922
_cell_length_c     17.04885
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       307.83119
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.50000 0.50000 0.00000 1.00000
  Tm1 Tm 0.50000 0.50000 0.25181 1.00000
  Tm2 Tm 0.50000 0.50000 0.50000 1.00000
  Tm3 Tm 0.50000 0.50000 0.74819 1.00000
  Ga1 Ga 0.00000 0.00000 0.00000 1.00000
  Ga2 Ga 0.00000 0.00000 0.25022 1.00000
  Ga3 Ga 0.00000 0.00000 0.50000 1.00000
  Ga4 Ga 0.00000 0.00000 0.74978 1.00000
  Ga5 Ga 0.00000 0.50000 0.12729 1.00000
  Ga6 Ga 0.00000 0.50000 0.37583 1.00000
  Ga7 Ga 0.00000 0.50000 0.62417 1.00000
  Ga8 Ga 0.00000 0.50000 0.87271 1.00000
  Ga9 Ga 0.50000 0.00000 0.12729 1.00000
  Ga10 Ga 0.50000 0.00000 0.37583 1.00000
  Ga11 Ga 0.50000 0.00000 0.62417 1.00000
  Ga12 Ga 0.50000 0.00000 0.87271 1.00000
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