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V4Si3PdN8

Alexandria ALEX

Alex-ID: agm045295153 · Space group: R-3m (#166)

Alexandria Database API

Basic Information

Formula
V4Si3PdN8
Alex-ID
agm045295153
Elements
4
Sites
16
Space group
R-3m (#166)
Crystal system
trigonal
Volume
141.75
ų
Cell a
6.0231
Å
Cell b
6.0231
Å
Cell c
6.0231
Å
α angle
56.43
°
β angle
56.43
°
γ angle
56.43
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
V4Si3PdN8
V
4.00 · 25.0%
Si
3.00 · 18.8%
Pd
1.00 · 6.3%
N
8.00 · 50.0%

Energy & Stability

Energy above hull
0.7065
eV/atom
Formation energy
-0.5452
eV/atom
Corrected total energy
-130.2786
eV
Raw total energy
-130.2786
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0118
eV
DOS at Fermi level
7.6979
Total magnetisation
2.2550
μB

Additional Information

Prototype ID

AB3C4D8_20_spg12

Decomposition

Si3N4 Pd VN

Computed at

2024-08-08 03:00:05.223632

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm045295153).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data 
# CIF generated by HEAS from Alexandria entry agm045295153
data_agm045295153
_cell_length_a     6.02310
_cell_length_b     6.02310
_cell_length_c     6.02310
_cell_angle_alpha  56.42938
_cell_angle_beta   56.42938
_cell_angle_gamma  56.42938
_cell_volume       141.75006
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  V1 V 0.00000 0.00000 0.00000 1.00000
  V2 V 0.00000 0.50000 0.50000 1.00000
  V3 V 0.50000 0.00000 0.50000 1.00000
  V4 V 0.50000 0.50000 0.00000 1.00000
  Si1 Si 0.00000 0.50000 0.00000 1.00000
  Si2 Si 0.00000 0.00000 0.50000 1.00000
  Si3 Si 0.50000 0.00000 0.00000 1.00000
  Pd1 Pd 0.50000 0.50000 0.50000 1.00000
  N1 N 0.75578 0.75578 0.20687 1.00000
  N2 N 0.75578 0.20687 0.75578 1.00000
  N3 N 0.76180 0.76180 0.76180 1.00000
  N4 N 0.20687 0.75578 0.75578 1.00000
  N5 N 0.79313 0.24422 0.24422 1.00000
  N6 N 0.23820 0.23820 0.23820 1.00000
  N7 N 0.24422 0.79313 0.24422 1.00000
  N8 N 0.24422 0.24422 0.79313 1.00000
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