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Th8Ge3Sb4S

Alexandria ALEX

Alex-ID: agm047096331 · 空间群: R-3m (#166)

Alexandria Database API

基础信息

化学式
Th8Ge3Sb4S
Alex-ID
agm047096331
元素数
4
位点数
16
空间群
R-3m (#166)
晶系
trigonal
体积
474.43
ų
晶胞参数 a
8.8315
Å
晶胞参数 b
8.8315
Å
晶胞参数 c
8.8315
Å
α 角
58.86
°
β 角
58.86
°
γ 角
58.86
°

组成

元素组成（原子分数）
组成信息
化学式
Th8Ge3Sb4S
Th
8.00 · 50.0%
Ge
3.00 · 18.8%
Sb
4.00 · 25.0%
S
1.00 · 6.3%

能量与稳定性

凸包上方能量
0.0080
eV/atom
形成能
-1.0372
eV/atom
校正后总能量
-110.4431
eV
原始总能量
-109.7797
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0030
eV
费米能级态密度
8.2592
总磁矩
0.0000
μB

其他信息

原型 ID

AB3C4D8_20_spg12

分解产物

Th2GeSb Th3GeSb2 Th6GeS5

计算时间

2025-02-06 17:41:18

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm047096331).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm047096331
data_agm047096331
_cell_length_a     8.83151
_cell_length_b     8.83151
_cell_length_c     8.83151
_cell_angle_alpha  58.86296
_cell_angle_beta   58.86296
_cell_angle_gamma  58.86296
_cell_volume       474.42580
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Th1 Th 0.76071 0.76071 0.25513 1.00000
  Th2 Th 0.76071 0.25513 0.76071 1.00000
  Th3 Th 0.74257 0.74257 0.74257 1.00000
  Th4 Th 0.25513 0.76071 0.76071 1.00000
  Th5 Th 0.74487 0.23929 0.23929 1.00000
  Th6 Th 0.25743 0.25743 0.25743 1.00000
  Th7 Th 0.23929 0.74487 0.23929 1.00000
  Th8 Th 0.23929 0.23929 0.74487 1.00000
  Ge1 Ge 0.50000 0.00000 0.50000 1.00000
  Ge2 Ge 0.50000 0.50000 0.00000 1.00000
  Ge3 Ge 0.00000 0.50000 0.50000 1.00000
  Sb1 Sb 0.50000 0.50000 0.50000 1.00000
  Sb2 Sb 0.50000 0.00000 0.00000 1.00000
  Sb3 Sb 0.00000 0.50000 0.00000 1.00000
  Sb4 Sb 0.00000 0.00000 0.50000 1.00000
  S1 S 0.00000 0.00000 0.00000 1.00000
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