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Ac6SiBi2Se3

Alexandria ALEX

Alex-ID: agm055036626 · 空间群: Immm (#71)

Alexandria Database API

基础信息

化学式
Ac6SiBi2Se3
Alex-ID
agm055036626
元素数
4
位点数
12
空间群
Immm (#71)
晶系
orthorhombic
体积
379.29
ų
晶胞参数 a
9.7349
Å
晶胞参数 b
9.7349
Å
晶胞参数 c
9.7349
Å
α 角
146.28
°
β 角
131.62
°
γ 角
60.27
°

组成

元素组成（原子分数）
组成信息
化学式
Ac6SiBi2Se3
Ac
6.00 · 50.0%
Si
1.00 · 8.3%
Bi
2.00 · 16.7%
Se
3.00 · 25.0%

能量与稳定性

凸包上方能量
0.2800
eV/atom
形成能
-1.1303
eV/atom
校正后总能量
-61.8705
eV
原始总能量
-61.8704
eV

电子结构

间接带隙
0.0000
eV
直接带隙
0.0017
eV
费米能级态密度
6.0613
总磁矩
0.0003
μB

其他信息

原型 ID

AB2C3D6_319_spg12

分解产物

Ac4SiSe3 AcBi

计算时间

2024-11-03 01:36:24.703875

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm055036626).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX 
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据 
# CIF generated by HEAS from Alexandria entry agm055036626
data_agm055036626
_cell_length_a     9.73486
_cell_length_b     9.73486
_cell_length_c     9.73486
_cell_angle_alpha  146.27981
_cell_angle_beta   131.62038
_cell_angle_gamma  60.26754
_cell_volume       379.29288
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ac1 Ac 0.91583 0.65823 0.25760 1.00000
  Ac2 Ac 0.59937 0.34177 0.25760 1.00000
  Ac3 Ac 0.08417 0.34177 0.74240 1.00000
  Ac4 Ac 0.23530 0.00000 0.23530 1.00000
  Ac5 Ac 0.76470 0.00000 0.76470 1.00000
  Ac6 Ac 0.40063 0.65823 0.74240 1.00000
  Si1 Si 0.00000 0.50000 0.50000 1.00000
  Bi1 Bi 0.66727 0.16727 0.50000 1.00000
  Bi2 Bi 0.33273 0.83273 0.50000 1.00000
  Se1 Se 0.50000 0.50000 0.00000 1.00000
  Se2 Se 0.16592 0.16592 0.00000 1.00000
  Se3 Se 0.83408 0.83408 0.00000 1.00000
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