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Tb12Ga7Si

Alexandria ALEX

Alex-ID: agm067764484 · Space group: I4/mcm (#140)

Basic Information

Formula
Tb12Ga7Si
Alex-ID
agm067764484
Elements
3
Sites
40
Space group
I4/mcm (#140)
Crystal system
tetragonal
Volume
1,012.69
ų
Cell a
11.1226
Å
Cell b
11.1226
Å
Cell c
11.1226
Å
α angle
116.98
°
β angle
116.98
°
γ angle
95.32
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
Tb12Ga7Si
Tb
24.00 · 60.0%
Ga
14.00 · 35.0%
Si
2.00 · 5.0%

Energy & Stability

Energy above hull
0.0000
eV/atom
Formation energy
-0.5600
eV/atom
Corrected total energy
-186.8317
eV
Raw total energy
-186.8317
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0195
eV
DOS at Fermi level
21.1902
Total magnetisation
0.0000
μB

Additional Information

Prototype ID

AB7C12_0_spg140

Decomposition

Tb12Ga7Si

Computed at

2024-12-06 06:54:05

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm067764484).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm067764484
data_agm067764484
_cell_length_a     11.12262
_cell_length_b     11.12262
_cell_length_c     11.12262
_cell_angle_alpha  116.97892
_cell_angle_beta   116.97892
_cell_angle_gamma  95.31750
_cell_volume       1012.69430
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Tb1 Tb 0.35412 0.85412 0.50000 1.00000
  Tb2 Tb 0.64588 0.14588 0.50000 1.00000
  Tb3 Tb 0.85412 0.35412 0.50000 1.00000
  Tb4 Tb 0.14588 0.64588 0.50000 1.00000
  Tb5 Tb 0.43071 0.56451 0.26763 1.00000
  Tb6 Tb 0.56929 0.43549 0.73237 1.00000
  Tb7 Tb 0.29688 0.16308 0.73237 1.00000
  Tb8 Tb 0.16308 0.43071 0.86620 1.00000
  Tb9 Tb 0.06929 0.33692 0.13380 1.00000
  Tb10 Tb 0.70312 0.83692 0.26763 1.00000
  Tb11 Tb 0.83692 0.56929 0.13380 1.00000
  Tb12 Tb 0.93071 0.66308 0.86620 1.00000
  Tb13 Tb 0.56451 0.29688 0.13380 1.00000
  Tb14 Tb 0.20312 0.93549 0.86620 1.00000
  Tb15 Tb 0.43549 0.70312 0.86620 1.00000
  Tb16 Tb 0.79688 0.06451 0.13380 1.00000
  Tb17 Tb 0.33692 0.20312 0.26763 1.00000
  Tb18 Tb 0.66308 0.79688 0.73237 1.00000
  Tb19 Tb 0.93549 0.06929 0.73237 1.00000
  Tb20 Tb 0.06451 0.93071 0.26763 1.00000
  Tb21 Tb 0.67043 0.17043 0.84087 1.00000
  Tb22 Tb 0.32957 0.82957 0.15913 1.00000
  Tb23 Tb 0.82957 0.67043 0.50000 1.00000
  Tb24 Tb 0.17043 0.32957 0.50000 1.00000
  Ga1 Ga 0.11918 0.61918 0.73835 1.00000
  Ga2 Ga 0.88082 0.38082 0.26165 1.00000
  Ga3 Ga 0.38082 0.11918 0.50000 1.00000
  Ga4 Ga 0.61918 0.88082 0.50000 1.00000
  Ga5 Ga 0.50000 0.50000 0.00000 1.00000
  Ga6 Ga 0.00000 0.00000 0.00000 1.00000
  Ga7 Ga 0.47493 0.97493 0.85440 1.00000
  Ga8 Ga 0.52507 0.02507 0.14560 1.00000
  Ga9 Ga 0.12053 0.62053 0.14560 1.00000
  Ga10 Ga 0.62053 0.47493 0.50000 1.00000
  Ga11 Ga 0.02507 0.87947 0.50000 1.00000
  Ga12 Ga 0.87947 0.37947 0.85440 1.00000
  Ga13 Ga 0.37947 0.52507 0.50000 1.00000
  Ga14 Ga 0.97493 0.12053 0.50000 1.00000
  Si1 Si 0.25000 0.25000 0.00000 1.00000
  Si2 Si 0.75000 0.75000 0.00000 1.00000
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