LaGaSi
Alexandria ALEXAlex-ID: agm070277652 · Space group: I-4m2 (#119)
Basic Information
Composition
Energy & Stability
Electronic Structure
Additional Information
ABC_542_spg12
LaGaSi
2024-12-06 06:32:33
Citation
The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm070277652).
Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620
@article{Cavignac2026Alexandria,
author = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
and Marques, Miguel A. L.},
title = {{AI}-Driven expansion and application of the {A}lexandria database},
journal = {Journal of Physics: Materials},
year = {2026},
volume = {9},
number = {2},
pages = {025014},
doi = {10.1088/2515-7639/ae6620},
url = {https://doi.org/10.1088/2515-7639/ae6620}
}
3D Crystal Structure Rendering
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# CIF generated by HEAS from Alexandria entry agm070277652
data_agm070277652
_cell_length_a 7.85745
_cell_length_b 7.85745
_cell_length_c 7.85745
_cell_angle_alpha 148.14957
_cell_angle_beta 148.14957
_cell_angle_gamma 45.66462
_cell_volume 134.64218
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
La1 La 0.75000 0.25000 0.50000 1.00000
La2 La 0.00000 0.00000 0.00000 1.00000
Ga1 Ga 0.33487 0.83487 0.50000 1.00000
Ga2 Ga 0.16513 0.66513 0.50000 1.00000
Si1 Si 0.41880 0.41880 0.00000 1.00000
Si2 Si 0.58120 0.58120 0.00000 1.00000
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