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GaN

Alexandria ALEX

Alex-ID: agm070906086 · Space group: P4_332 (#212)

Basic Information

Formula
GaN
Alex-ID
agm070906086
Elements
2
Sites
24
Space group
P4_332 (#212)
Crystal system
cubic
Volume
501.01
ų
Cell a
7.9423
Å
Cell b
7.9423
Å
Cell c
7.9423
Å
α angle
90.00
°
β angle
90.00
°
γ angle
90.00
°

Composition

Element Composition (atomic fraction)
Composition Info
Formula
GaN
Ga
12.00 · 50.0%
N
12.00 · 50.0%

Energy & Stability

Energy above hull
1.6974
eV/atom
Formation energy
1.0306
eV/atom
Corrected total energy
-107.0474
eV
Raw total energy
-107.0474
eV

Electronic Structure

Indirect band gap
0.0000
eV
Direct band gap
0.0118
eV
DOS at Fermi level
14.2445
Total magnetisation
6.3211
μB

Additional Information

Prototype ID

AB_11346_spg212

Decomposition

GaN

Computed at

2024-10-15 08:44:37.586128

Citation

Alexandria website
https://alexandria.icams.rub.de/
Attribution

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm070906086).

Reference

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

3D Crystal Structure Rendering

Loading 3D structure…

Style: Ball & Stick
Raw CIF Data
# CIF generated by HEAS from Alexandria entry agm070906086
data_agm070906086
_cell_length_a     7.94234
_cell_length_b     7.94234
_cell_length_c     7.94234
_cell_angle_alpha  90.00000
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       501.00968
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Ga1 Ga 0.62500 0.10368 0.14632 1.00000
  Ga2 Ga 0.87500 0.89632 0.64632 1.00000
  Ga3 Ga 0.37500 0.60368 0.35368 1.00000
  Ga4 Ga 0.12500 0.39632 0.85368 1.00000
  Ga5 Ga 0.14632 0.62500 0.10368 1.00000
  Ga6 Ga 0.64632 0.87500 0.89632 1.00000
  Ga7 Ga 0.35368 0.37500 0.60368 1.00000
  Ga8 Ga 0.85368 0.12500 0.39632 1.00000
  Ga9 Ga 0.10368 0.14632 0.62500 1.00000
  Ga10 Ga 0.89632 0.64632 0.87500 1.00000
  Ga11 Ga 0.60368 0.35368 0.37500 1.00000
  Ga12 Ga 0.39632 0.85368 0.12500 1.00000
  N1 N 0.62500 0.44743 0.80257 1.00000
  N2 N 0.87500 0.55257 0.30257 1.00000
  N3 N 0.37500 0.94743 0.69743 1.00000
  N4 N 0.12500 0.05257 0.19743 1.00000
  N5 N 0.80257 0.62500 0.44743 1.00000
  N6 N 0.30257 0.87500 0.55257 1.00000
  N7 N 0.69743 0.37500 0.94743 1.00000
  N8 N 0.19743 0.12500 0.05257 1.00000
  N9 N 0.44743 0.80257 0.62500 1.00000
  N10 N 0.55257 0.30257 0.87500 1.00000
  N11 N 0.94743 0.69743 0.37500 1.00000
  N12 N 0.05257 0.19743 0.12500 1.00000
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