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Si2SF6

Alexandria ALEX

Alex-ID: agm070935348 · 空间群: P2_1 (#4)

基础信息

化学式
Si2SF6
Alex-ID
agm070935348
元素数
3
位点数
36
空间群
P2_1 (#4)
晶系
monoclinic
体积
746.80
ų
晶胞参数 a
9.5371
Å
晶胞参数 b
6.9746
Å
晶胞参数 c
11.4265
Å
α 角
79.28
°
β 角
90.00
°
γ 角
90.00
°

组成

元素组成(原子分数)
组成信息
化学式
Si2SF6
Si
8.00 · 22.2%
S
4.00 · 11.1%
F
24.00 · 66.7%

能量与稳定性

凸包上方能量
0.0170
eV/atom
形成能
-3.0799
eV/atom
校正后总能量
-204.8640
eV
原始总能量
-202.2101
eV

电子结构

间接带隙
5.0943
eV
直接带隙
5.0943
eV
费米能级态密度
0.0000
总磁矩
0.2217
μB

其他信息

原型 ID

AB2C6_6034_spg4

分解产物

SiS2 SiF4

计算时间

2024-09-15 07:09:43.166032

引用参考

Alexandria 官方页面
https://alexandria.icams.rub.de/
参考引用

The crystal structure and related material properties of this entry were obtained from the Alexandria database (Alex-ID: agm070935348).

文献引用

Th. Cavignac, J. Schmidt, P.-P. De Breuck, A. Loew, T. F. T. Cerqueira, H.-C. Wang, A. Bochkarev, Y. Lysogorskiy, A. H. Romero, R. Drautz, S. Botti and M. A. L. Marques. AI-Driven expansion and application of the Alexandria database. J. Phys. Mater. 9, 025014 (2026). https://doi.org/10.1088/2515-7639/ae6620

BibTeX
@article{Cavignac2026Alexandria,
  author  = {Cavignac, Th{\'e}o and Schmidt, Jonathan and De Breuck, Pierre-Paul and Loew, Antoine
             and Cerqueira, Tiago F. T. and Wang, Hai-Chen and Bochkarev, Anton
             and Lysogorskiy, Yury and Romero, Aldo H. and Drautz, Ralf and Botti, Silvana
             and Marques, Miguel A. L.},
  title   = {{AI}-Driven expansion and application of the {A}lexandria database},
  journal = {Journal of Physics: Materials},
  year    = {2026},
  volume  = {9},
  number  = {2},
  pages   = {025014},
  doi     = {10.1088/2515-7639/ae6620},
  url     = {https://doi.org/10.1088/2515-7639/ae6620}
}

晶体结构 3D 渲染

加载 3D 结构...

样式: Ball & Stick
原始 CIF 数据
# CIF generated by HEAS from Alexandria entry agm070935348
data_agm070935348
_cell_length_a     9.53710
_cell_length_b     6.97464
_cell_length_c     11.42652
_cell_angle_alpha  79.28027
_cell_angle_beta   90.00000
_cell_angle_gamma  90.00000
_cell_volume       746.80347
_symmetry_space_group_name_H-M 'P 1'
_symmetry_Int_Tables_number 1
loop_
_symmetry_equiv_pos_as_xyz
  'x, y, z'
loop_
_atom_site_label
_atom_site_type_symbol
_atom_site_fract_x
_atom_site_fract_y
_atom_site_fract_z
_atom_site_occupancy
  Si1 Si 0.79028 0.23589 0.91778 1.00000
  Si2 Si 0.68391 0.79639 0.50319 1.00000
  Si3 Si 0.18391 0.20361 0.49681 1.00000
  Si4 Si 0.29028 0.76411 0.08222 1.00000
  Si5 Si 0.58223 0.12697 0.28458 1.00000
  Si6 Si 0.00541 0.67478 0.23598 1.00000
  Si7 Si 0.08223 0.87303 0.71542 1.00000
  Si8 Si 0.50541 0.32522 0.76402 1.00000
  S1 S 0.22061 0.90634 0.56924 1.00000
  S2 S 0.10133 0.60606 0.08278 1.00000
  S3 S 0.60133 0.39394 0.91722 1.00000
  S4 S 0.72061 0.09366 0.43076 1.00000
  F1 F 0.62828 0.77482 0.63630 1.00000
  F2 F 0.88502 0.31364 0.80459 1.00000
  F3 F 0.38502 0.68636 0.19541 1.00000
  F4 F 0.12828 0.22518 0.36370 1.00000
  F5 F 0.37225 0.73233 0.96605 1.00000
  F6 F 0.87225 0.26767 0.03395 1.00000
  F7 F 0.07130 0.29796 0.57206 1.00000
  F8 F 0.57130 0.70204 0.42794 1.00000
  F9 F 0.32579 0.32444 0.49435 1.00000
  F10 F 0.76782 0.00812 0.92332 1.00000
  F11 F 0.82579 0.67556 0.50565 1.00000
  F12 F 0.26782 0.99188 0.07668 1.00000
  F13 F 0.10980 0.65657 0.34643 1.00000
  F14 F 0.42352 0.07604 0.32230 1.00000
  F15 F 0.60980 0.34343 0.65357 1.00000
  F16 F 0.92352 0.92396 0.67770 1.00000
  F17 F 0.44360 0.10961 0.78521 1.00000
  F18 F 0.58972 0.35042 0.22262 1.00000
  F19 F 0.08972 0.64958 0.77738 1.00000
  F20 F 0.94360 0.89039 0.21479 1.00000
  F21 F 0.12226 0.00022 0.81278 1.00000
  F22 F 0.62226 0.99978 0.18722 1.00000
  F23 F 0.87859 0.52667 0.26888 1.00000
  F24 F 0.37859 0.47333 0.73112 1.00000
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